Skip to main content

onsemi NSS40300MDR2G BJTs

Low VCE(sat) Transistor, Dual PNP, 40 V, 3.0 A, SOIC-8 Narrow Body, 2500-REEL

90,000 ActiveonsemiSOIC-8$0.68
NSS40300MDR2G SOIC-8 package illustration

Same model may have multiple batches, images only for reference.

NSS40300MDR2G
Manufacturer
Part Number (MPN)
NSS40300MDR2G
Detailed Description
Low VCE(sat) Transistor, Dual PNP, 40 V, 3.0 A, SOIC-8 Narrow Body, 2500-REEL
Package
SOIC-8
Lifecycle Status
Active
Datasheet
PDF NSS40300MDR2G Datasheet
Quick Jump:
Ready to order?In stock and ready to ship.
Competitive Pricing
Fast & Reliable Delivery
Quality Assured

Technical Specifications

onsemi NSS40300MDR2G BJTs technical specifications.

General

RoHS
Yes
Package
SOIC-8

Related Parts Comparison (NSS40300MDR2G vs NSS40302PDR2G vs NSS20601CF8T1G vs NSS20500UW3TBG)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
RoHSYesYesYesYes
PackageSOIC-8--ChipFET-8WDFN-3
Package / Case--SOIC8-SMD, Flat Leads3-WDFN Exposed Pad
Mounting Type--Surface MountSurface MountSurface Mount
Operating Temperature---55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Lifecycle Status--ActiveActiveActive
Current Collector Cutoff Max--100nA (ICBO)100nA (ICBO)100nA (ICBO)
Current Collector IC Max--3 A6 A5 A
Dc Current Gain Hfe Min IC Vce--180 @ 1A, 2V200 @ 1A, 2V200 @ 2A, 2V
Frequency Transition--100 MHz140MHz100MHz
Polarity--NPN, PNPNPNPNP
Power Max--653 mW830 mW875 mW
Action

More Parts in BJTs

Browse additional parts from the same category, grouped by series, package type, and manufacturer. These are catalog suggestions — not verified pin-compatible alternates.