onsemi NSS40302PDR2G BJTs
40V 3A NPN/PNP BJT Transistor, SOIC-8, 115mV VCE(sat), 100MHz
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
NSS40302PDR2G
Detailed Description
40V 3A NPN/PNP BJT Transistor, SOIC-8, 115mV VCE(sat), 100MHz
Package
SOIC
Lifecycle Status
Active
Datasheet
NSS40302PDR2G Datasheet
Quick Jump:
Technical Specifications
onsemi NSS40302PDR2G BJTs technical specifications.
General
RoHS
Yes
Number of Pins
8
Package / Case
SOIC
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Collector Base Voltage Vcbo
40 V
Collector Emitter Breakdown Voltage
40 V
Collector Emitter Saturation Voltage
115 mV
Collector Emitter Voltage Vceo
40 V
Alternate Parts Comparison (NSS40302PDR2G vs NSS20601CF8T1G vs NSS20500UW3TBG vs NSS30201MR6T1G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | SOIC | 8-SMD, Flat Leads | 3-WDFN Exposed Pad | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| RoHS | Yes | True | True | True |
| Lifecycle Status | Active | Active | Active | Active |
| Current Collector Cutoff Max | 100nA (ICBO) | 100nA (ICBO) | 100nA (ICBO) | 100nA |
| Current Collector IC Max | 3 A | 6 A | 5 A | 2 A |
| Dc Current Gain Hfe Min IC Vce | 180 @ 1A, 2V | 200 @ 1A, 2V | 200 @ 2A, 2V | 300 @ 500mA, 5V |
| Frequency Transition | 100 MHz | 140MHz | 100MHz | 300MHz |
| Polarity | NPN, PNP | NPN | PNP | NPN |
| Power Max | 653 mW | 830 mW | 875 mW | 535 mW |
| Transistor Type | NPN, PNP | NPN | PNP | NPN |
| Action |
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