onsemi MUN2133T1G BJTs
100mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, CASE 318D-04, SC-59, 3 PIN
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
MUN2133T1G
Detailed Description
100mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, CASE 318D-04, SC-59, 3 PIN
Package
SC-59
Lifecycle Status
Active
Datasheet
MUN2133T1G Datasheet
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Technical Specifications
onsemi MUN2133T1G BJTs technical specifications.
General
RoHS
Yes
Package / Case
TO-236-3, SC-59, SOT-23-3
Mounting Type
Surface Mount
Lifecycle Status
Active
Resistor Emitter Base R2
47 kOhms
Dc Current Gain Hfe Min IC Vce
80 @ 5mA, 10V
Vce Saturation Max Ib IC
250mV @ 300µA, 10mA
Current Collector Cutoff Max
500nA
Transistor Type
PNP - Pre-Biased
Power Max
230 mW
Alternate Parts Comparison (MUN2133T1G vs MUN5211T1G vs MUN5314DW1T1G vs MUN5136T1G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-236-3, SC-59, SOT-23-3 | SC-70, SOT-323 | 6-TSSOP | SC-70, SOT-323 |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Lifecycle Status | Active | Production | Active | Active |
| Current Collector Cutoff Max | 500nA | 500nA | 500nA | 500nA |
| Current Collector IC Max | 100 mA | 100 mA | 100mA | 100 mA |
| Dc Current Gain Hfe Min IC Vce | 80 @ 5mA, 10V | 35 @ 5mA, 10V | 80 @ 5mA, 10V | 80 @ 5mA, 10V |
| Power Max | 230 mW | 202 mW | 250mW | 202 mW |
| Resistor Base R1 | 4.7 kOhms | 10 kOhms | 10kOhms | 100 kOhms |
| Resistor Emitter Base R2 | 47 kOhms | 10 kOhms | 47kOhms | 100 kOhms |
| Transistor Type | PNP - Pre-Biased | NPN - Pre-Biased | 1 NPN, 1 PNP - Pre-Biased (Dual) | PNP - Pre-Biased |
| Vce Saturation Max Ib IC | 250mV @ 300µA, 10mA | 250mV @ 300µA, 10mA | 250mV @ 300µA, 10mA | 250mV @ 300µA, 10mA |
| Voltage Collector Emitter Breakdown Max | 50 V | 50 V | 50V | 50 V |
| Action |
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