onsemi MSD602-RT1G BJTs
NPN Bipolar Transistor, SC-59 3 LEAD, 3000-REEL
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
MSD602-RT1G
Detailed Description
NPN Bipolar Transistor, SC-59 3 LEAD, 3000-REEL
Package
SC-59
Lifecycle Status
Active
Datasheet
MSD602-RT1G Datasheet
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Technical Specifications
onsemi MSD602-RT1G BJTs technical specifications.
General
Package / Case
TO-236-3, SC-59, SOT-23-3
Mounting Type
Surface Mount
Operating Temperature
150°C (TJ)
Lifecycle Status
Active
Current Collector Cutoff Max
100nA (ICBO)
Dc Current Gain Hfe Min IC Vce
120 @ 150mA, 10V
Power Max
200 mW
Transistor Type
NPN
Current Collector IC Max
500 mA
Voltage Collector Emitter Breakdown Max
50 V
Alternate Parts Comparison (MSD602-RT1G vs SMUN2211T1G vs SMUN2213T1G vs SMUN2214T1G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Lifecycle Status | Active | Active | Active | Active |
| Current Collector Cutoff Max | 100nA (ICBO) | 500nA | 500nA | 500nA |
| Current Collector IC Max | 500 mA | 100 mA | 100 mA | 100 mA |
| Dc Current Gain Hfe Min IC Vce | 120 @ 150mA, 10V | 35 @ 5mA, 10V | 80 @ 5mA, 10V | 80 @ 5mA, 10V |
| Power Max | 200 mW | 230 mW | 230 mW | 230 mW |
| Transistor Type | NPN | NPN - Pre-Biased | NPN - Pre-Biased | NPN - Pre-Biased |
| Vce Saturation Max Ib IC | 600mV @ 30mA, 300mA | 250mV @ 300µA, 10mA | 250mV @ 300µA, 10mA | 250mV @ 300µA, 10mA |
| Voltage Collector Emitter Breakdown Max | 50 V | 50 V | 50 V | 50 V |
| Grade | -- | Automotive | Automotive | Automotive |
| Qualification | -- | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Action |
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