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onsemi MSD2714AT1G RF BJT

RF Transistor NPN 25V 650MHz 225mW Surface Mount SC-59

In StockonsemiTO-236-3, SC-59, SOT-23-3
MSD2714AT1G TO-236-3, SC-59, SOT-23-3 package illustration

Same model may have multiple batches, images only for reference.

MSD2714AT1G
Manufacturer
Part Number (MPN)
MSD2714AT1G
Detailed Description
RF Transistor NPN 25V 650MHz 225mW Surface Mount SC-59
Package
TO-236-3, SC-59, SOT-23-3
Lifecycle Status
Obsolete
Datasheet
PDF MSD2714AT1G Datasheet
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Technical Specifications

onsemi MSD2714AT1G RF BJT technical specifications.

General

RoHS
Yes
Package / Case
TO-236-3, SC-59, SOT-23-3
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Obsolete
Power Max
225mW
Dc Current Gain Hfe Min IC Vce
90 @ 1mA, 6V
Transistor Type
NPN
Voltage Collector Emitter Breakdown Max
25V
Frequency Transition
650MHz

Alternate Parts Comparison (MSD2714AT1G vs MMBFJ211 vs MMBT918LT1G vs MMBT5087LT1G)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-236-3, SC-59, SOT-23-3TO-236-3, SC-59, SOT-23-3TO-236-3, SC-59, SOT-23-3TO-236-3, SC-59, SOT-23-3
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
RoHSYesYesYesYes
Lifecycle StatusObsoleteActiveActiveActive
PackageSC-59-3SOT23-3SOT23-3SOT23-3
Operating Temperature-55°C ~ 150°C (TJ)---55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Case Outline318D-04--318-08318-08
CompliancePbAHP--PbAHPPbAHP
Container Qty3000--30003000
Container TypeREEL--REELREEL
Dc Current Gain Hfe Min IC Vce90 @ 1mA, 6V--20 @ 3mA, 1V250 @ 100µA, 5V
Frequency Transition650MHz--600MHz40MHz
Action

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