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onsemi MMBT6429LT1G RF BJT

NPN BJT Transistor, 45V VCEO, 200mA IC, 700MHz fT, SOT-23

1,590 ActiveonsemiTO-236-3, SC-59, SOT-23-3$0.11
MMBT6429LT1G - No Image Available

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MMBT6429LT1G
Manufacturer
Part Number (MPN)
MMBT6429LT1G
Detailed Description
NPN BJT Transistor, 45V VCEO, 200mA IC, 700MHz fT, SOT-23
Package
TO-236-3, SC-59, SOT-23-3
Lifecycle Status
Active
Datasheet
PDF MMBT6429LT1G Datasheet
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Technical Specifications

onsemi MMBT6429LT1G RF BJT technical specifications.

General

Package / Case
TO-236-3, SC-59, SOT-23-3
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
500 @ 100µA, 5V
Power Max
225 mW
Frequency Transition
700MHz
Transistor Type
NPN
Current Collector IC Max
200 mA
Voltage Collector Emitter Breakdown Max
45 V

Alternate Parts Comparison (MMBT6429LT1G vs MMBT5087LT1G vs MMBT5087LT3G vs MMBFJ211)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-236-3, SC-59, SOT-23-3TO-236-3, SC-59, SOT-23-3TO-236-3, SC-59, SOT-23-3TO-236-3, SC-59, SOT-23-3
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Lifecycle StatusActiveActiveActiveActive
DescriptionTRANS NPN 45V 0.2A SOT23-3TRANS PNP 50V 0.05A SOT23-3TRANS PNP 50V 0.05A SOT23-3RF MOSFET JFET SOT23-3
Detailed DescriptionBipolar (BJT) Transistor NPN 45 V 200 mA 700MHz 225 mW Surface Mount SOT-23-3 (TO-236)Bipolar (BJT) Transistor PNP 50 V 50 mA 40MHz 300 mW Surface Mount SOT-23-3 (TO-236)Bipolar (BJT) Transistor PNP 50 V 50 mA 40MHz 300 mW Surface Mount SOT-23-3 (TO-236)RF Mosfet SOT-23-3
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)--
Current Collector Cutoff Max100nA50nA (ICBO)50nA (ICBO)--
Current Collector IC Max200 mA50 mA50 mA--
Dc Current Gain Hfe Min IC Vce500 @ 100µA, 5V250 @ 100µA, 5V250 @ 100µA, 5V--
Frequency Transition700MHz40MHz40MHz--
Power Max225 mW300 mW300 mW--
Transistor TypeNPNPNPPNP--
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