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onsemi MSC2295-BT1G RF BJT

RF Transistor NPN 20V 30mA 150MHz 200mW Surface Mount SC-59

3,000onsemiTO-236-3, SC-59, SOT-23-3$19.21
MSC2295-BT1G TO-236-3, SC-59, SOT-23-3 package illustration

Same model may have multiple batches, images only for reference.

MSC2295-BT1G
Manufacturer
Part Number (MPN)
MSC2295-BT1G
Detailed Description
RF Transistor NPN 20V 30mA 150MHz 200mW Surface Mount SC-59
Package
TO-236-3, SC-59, SOT-23-3
Lifecycle Status
Obsolete
Datasheet
PDF MSC2295-BT1G Datasheet
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Technical Specifications

onsemi MSC2295-BT1G RF BJT technical specifications.

General

RoHS
Yes
Package / Case
TO-236-3, SC-59, SOT-23-3
Mounting Type
Surface Mount
Operating Temperature
150°C (TJ)
Lifecycle Status
Obsolete
Dc Current Gain Hfe Min IC Vce
70 @ 1mA, 10V
Current Collector IC Max
30mA
Transistor Type
NPN
Voltage Collector Emitter Breakdown Max
20V
Frequency Transition
150MHz

Alternate Parts Comparison (MSC2295-BT1G vs MMBFJ211 vs MMBTH10-4LT1G vs MMBT5087LT1G)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-236-3, SC-59, SOT-23-3TO-236-3, SC-59, SOT-23-3TO-236-3, SC-59, SOT-23-3TO-236-3, SC-59, SOT-23-3
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
RoHSYesYesYesYes
Lifecycle StatusObsoleteActiveActiveActive
PackageSOT23-3SOT23-3SOT23-3SOT23-3
Operating Temperature150°C (TJ)---55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Dc Current Gain Hfe Min IC Vce70 @ 1mA, 10V--120 @ 4mA, 10V250 @ 100µA, 5V
Frequency Transition150MHz--800MHz40MHz
Power Max200mW--225mW300 mW
Transistor TypeNPN--NPNPNP
Voltage Collector Emitter Breakdown Max20V--25V50 V
Action

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