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onsemi MPSA06RA BJTs

Bipolar Transistors - BJT NPN Transistor Medium Power

324,000 ActiveonsemiTO-226-3, TO-92-3 (TO-226AA) Formed Leads$0.16
MPSA06RA TO-226-3, TO-92-3 (TO-226AA) Formed Leads package illustration

Same model may have multiple batches, images only for reference.

MPSA06RA
Manufacturer
Part Number (MPN)
MPSA06RA
Detailed Description
Bipolar Transistors - BJT NPN Transistor Medium Power
Package
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Lifecycle Status
Active
Datasheet
PDF MPSA06RA Datasheet
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Technical Specifications

onsemi MPSA06RA BJTs technical specifications.

General

RoHS
Yes
Package / Case
TO-226-3, TO-92-3
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
100 @ 100mA, 1V
Power Max
625 mW
Frequency Transition
100MHz
Transistor Type
NPN
Current Collector IC Max
500 mA

Related Parts Comparison (MPSA06RA vs MPSA05RA vs MPSA29-D26Z vs MBT3906DW1T1G)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
Package / CaseTO-226-3, TO-92-3TO-226-3, TO-92-3TO-226-3, TO-92-36-TSSOP
Mounting TypeThrough HoleThrough HoleThrough HoleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
RoHSYesYesYesCompliant
Lifecycle StatusActiveActiveActiveProduction
Current Collector IC Max500 mA500 mA800 mA200mA
Dc Current Gain Hfe Min IC Vce100 @ 100mA, 1V100 @ 100mA, 1V10000 @ 100mA, 5V100 @ 10mA, 1V
PackageTO-92-3TO-92-3TO-92-3 LFSOT-363-6
Power Max625 mW625 mW625 mW150mW
Transistor TypeNPNNPNNPN - Darlington2 PNP (Dual)
Vce Saturation Max Ib IC250mV @ 10mA, 100mA250mV @ 10mA, 100mA1.5V @ 100µA, 100mA400mV @ 5mA, 50mA
Voltage Collector Emitter Breakdown Max80 V60 V100 V40V
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