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onsemi MMBTH81 RF BJT

RF Transistor PNP 20V 50mA 600MHz 225mW Surface Mount SOT-23-3

In Stock ActiveonsemiTO-236-3, SC-59, SOT-23-3
MMBTH81 TO-236-3, SC-59, SOT-23-3 package illustration

Same model may have multiple batches, images only for reference.

MMBTH81
Manufacturer
Part Number (MPN)
MMBTH81
Detailed Description
RF Transistor PNP 20V 50mA 600MHz 225mW Surface Mount SOT-23-3
Package
TO-236-3, SC-59, SOT-23-3
Lifecycle Status
Active
Datasheet
PDF MMBTH81 Datasheet
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Technical Specifications

onsemi MMBTH81 RF BJT technical specifications.

General

Series
MMBTH81
RoHS
Yes
Package / Case
TO-236-3, SC-59, SOT-23-3
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
60 @ 5mA, 10V
Current Collector IC Max
50mA
Transistor Type
PNP
Voltage Collector Emitter Breakdown Max
20V

Alternate Parts Comparison (MMBTH81 vs MMBTH10-4LT1G vs MMBTH10RG vs MMBTH10)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-236-3, SC-59, SOT-23-3TO-236-3, SC-59, SOT-23-3TO-236-3, SC-59, SOT-23-3TO-236-3, SC-59, SOT-23-3
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
RoHSYesYesYesYes
Lifecycle StatusActiveActiveActiveObsolete
Dc Current Gain Hfe Min IC Vce60 @ 5mA, 10V120 @ 4mA, 10V50 @ 1mA, 6V60 @ 4mA, 10V
Frequency Transition600MHz800MHz450MHz650MHz
PackageSOT23-3SOT23-3SOT23-3SOT23-3
Power Max225mW225mW225mW225mW
Transistor TypePNPNPNNPNNPN
Voltage Collector Emitter Breakdown Max20V25V40V25V
Current Collector IC Max50mA--50mA50mA
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