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onsemi MMBTA42LT1G BJTs

300V NPN BJT Transistor, 500mA, 50MHz, SOT-23

308,714 ActiveonsemiMMBTA42LTSOT-23$0.03
MMBTA42LT1G - No Image Available

Same model may have multiple batches, images only for reference.

MMBTA42LT1G
Manufacturer
Part Number (MPN)
MMBTA42LT1G
Base Model
Detailed Description
300V NPN BJT Transistor, 500mA, 50MHz, SOT-23
Package
SOT-23
Lifecycle Status
Active
Datasheet
PDF MMBTA42LT1G Datasheet
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Ordering Code Family

MMBTA42LT groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

2 ordering variants listed on the family page.

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Technical Specifications

onsemi MMBTA42LT1G BJTs technical specifications.

General

Package / Case
TO-236-3, SC-59, SOT-23-3
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
40 @ 30mA, 10V
Power Max
225 mW
Frequency Transition
50MHz
Transistor Type
NPN
Current Collector IC Max
500 mA
Voltage Collector Emitter Breakdown Max
300 V

Alternate Parts Comparison (MMBTA42LT1G vs MMBTA42LT1G vs MMBTA42LT3G vs BC849CLT1G)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-236-3, SC-59, SOT-23-3--TO-236-3, SC-59, SOT-23-3TO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount--Surface MountSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)---55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Lifecycle StatusActive--ActiveActive
Current Collector Cutoff Max100nA (ICBO)--100nA (ICBO)15nA (ICBO)
Current Collector IC Max500 mA--500 mA100 mA
Dc Current Gain Hfe Min IC Vce40 @ 30mA, 10V--40 @ 30mA, 10V420 @ 2mA, 5V
DescriptionTRANS NPN 300V 0.5A SOT23-3--TRANS NPN 300V 0.5A SOT23-3TRANS NPN 30V 0.1A SOT23-3
Detailed DescriptionBipolar (BJT) Transistor NPN 300 V 500 mA 50MHz 225 mW Surface Mount SOT-23-3 (TO-236)--Bipolar (BJT) Transistor NPN 300 V 500 mA 50MHz 225 mW Surface Mount SOT-23-3 (TO-236)Bipolar (BJT) Transistor NPN 30 V 100 mA 100MHz 300 mW Surface Mount SOT-23-3 (TO-236)
Power Max225 mW--225 mW300 mW
Transistor TypeNPN--NPNNPN
Vce Saturation Max Ib IC500mV @ 2mA, 20mA--500mV @ 2mA, 20mA600mV @ 5mA, 100mA
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