onsemi MBT3904DW1T3G BJTs
Dual NPN BJT Transistor, 40V, 200mA, 300MHz, SOT-363-6
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
MBT3904DW1T3G
Base Model
Detailed Description
Dual NPN BJT Transistor, 40V, 200mA, 300MHz, SOT-363-6
Package
6-TSSOP, SC-88, SOT-363
Lifecycle Status
Active
Datasheet
MBT3904DW1T3G Datasheet
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Technical Specifications
onsemi MBT3904DW1T3G BJTs technical specifications.
General
Package / Case
6-TSSOP
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
100 @ 10mA, 1V
Power Max
150mW
Frequency Transition
300MHz
Transistor Type
2 NPN (Dual)
Current Collector IC Max
200mA
Voltage Collector Emitter Breakdown Max
40V
Alternate Parts Comparison (MBT3904DW1T3G vs MBT3904DW1T1H vs MBT3904DW1T1G vs MBT3906DW1T1G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Number of Pins | -- | -- | -- | 6 |
| RoHS | -- | -- | -- | Compliant |
| Lifecycle Status | Active | Active | Active | Active |
| China ROHS | -- | -- | -- | Compliant |
| Collector Base Voltage Vcbo | -- | -- | -- | 40 V |
| Collector Emitter Breakdown Voltage | -- | -- | -- | 40 V |
| Collector Emitter Saturation Voltage | -- | -- | -- | -400 mV |
| Collector Emitter Voltage Vceo | -- | -- | -- | 40 V |
| Contact Plating | -- | -- | -- | Tin |
| Current Rating | -- | -- | -- | -200 mA |
| Element Configuration | -- | -- | -- | Dual |
| Action |
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