onsemi MBT3904DW1T3G BJTs
Dual NPN BJT Transistor, 40V, 200mA, 300MHz, SOT-363-6
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
MBT3904DW1T3G
Base Model
Detailed Description
Dual NPN BJT Transistor, 40V, 200mA, 300MHz, SOT-363-6
Package
6-TSSOP, SC-88, SOT-363
Lifecycle Status
Active
Datasheet
MBT3904DW1T3G Datasheet
Quick Jump:
Technical Specifications
onsemi MBT3904DW1T3G BJTs technical specifications.
General
RoHS
Yes
Package / Case
6-TSSOP
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
100 @ 10mA, 1V
Power Max
150mW
Frequency Transition
300MHz
Transistor Type
2 NPN (Dual)
Current Collector IC Max
200mA
Alternate Parts Comparison (MBT3904DW1T3G vs MBT3904DW1T1H vs MBT3904DW1T1G vs MBT3906DW1T1G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | 6-TSSOP | 6-TSSOP | 6-TSSOP | 6-TSSOP |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Lifecycle Status | Active | Active | Active | Production |
| Current Collector IC Max | 200mA | 200mA | 200mA | 200mA |
| Dc Current Gain Hfe Min IC Vce | 100 @ 10mA, 1V | 100 @ 10mA, 1V | 100 @ 10mA, 1V | 100 @ 10mA, 1V |
| Power Max | 150mW | 150mW | 150mW | 150mW |
| Transistor Type | 2 NPN (Dual) | 2 NPN | 2 NPN (Dual) | 2 PNP (Dual) |
| Vce Saturation Max Ib IC | 300mV @ 5mA, 50mA | 300mV @ 5mA, 50mA | 300mV @ 5mA, 50mA | 400mV @ 5mA, 50mA |
| Voltage Collector Emitter Breakdown Max | 40V | 40V | 40V | 40V |
| RoHS | Yes | Yes | -- | Compliant |
| Frequency Transition | 300MHz | 300MHz | 300MHz | -- |
| Action |
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