onsemi KSP44TF BJTs
Bipolar Transistors - BJT NPN Si Transistor Epitaxial
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
KSP44TF
Detailed Description
Bipolar Transistors - BJT NPN Si Transistor Epitaxial
Package
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Lifecycle Status
Active
Datasheet
KSP44TF Datasheet
Quick Jump:
Technical Specifications
onsemi KSP44TF BJTs technical specifications.
General
RoHS
Yes
Package / Case
TO-226-3, TO-92-3
Mounting Type
Through Hole
Operating Temperature
150°C (TJ)
Lifecycle Status
Active
Current Collector Cutoff Max
500nA
Dc Current Gain Hfe Min IC Vce
50 @ 10mA, 10V
Power Max
625 mW
Transistor Type
NPN
Current Collector IC Max
300 mA
Alternate Parts Comparison (KSP44TF vs KSP2907ACTA vs BC547BTF vs BC549BTA)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-226-3, TO-92-3 | TO-226-3, TO-92-3 | TO-226-3, TO-92-3 | TO-226-3, TO-92-3 |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Operating Temperature | 150°C (TJ) | 150°C (TJ) | 150°C (TJ) | 150°C (TJ) |
| Lifecycle Status | Active | Active | Active | Active |
| Current Collector Cutoff Max | 500nA | 10nA (ICBO) | 15nA (ICBO) | 15nA (ICBO) |
| Current Collector IC Max | 300 mA | 600 mA | 100 mA | 100 mA |
| Dc Current Gain Hfe Min IC Vce | 50 @ 10mA, 10V | 100 @ 150mA, 10V | 200 @ 2mA, 5V | 200 @ 2mA, 5V |
| Power Max | 625 mW | 625 mW | 500 mW | 500 mW |
| Transistor Type | NPN | PNP | NPN | NPN |
| Vce Saturation Max Ib IC | 750mV @ 5mA, 50mA | 1.6V @ 50mA, 500mA | 600mV @ 5mA, 100mA | 600mV @ 5mA, 100mA |
| Voltage Collector Emitter Breakdown Max | 400 V | 60 V | 45 V | 30 V |
| Frequency Transition | -- | 200MHz | 300MHz | 300MHz |
| Action |
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