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onsemi FQP4N90C MOSFETs

900V 4A N-Channel Power MOSFET TO-220 4.2R

1,179onsemiTO-220-3$4.61
FQP4N90C - No Image Available

Same model may have multiple batches, images only for reference.

FQP4N90C
Manufacturer
Part Number (MPN)
FQP4N90C
Detailed Description
900V 4A N-Channel Power MOSFET TO-220 4.2R
Package
TO-220-3
Lifecycle Status
Obsolete
Datasheet
PDF FQP4N90C Datasheet
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Technical Specifications

onsemi FQP4N90C MOSFETs technical specifications.

General

Series
QFET®
Package / Case
TO-220-3
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Obsolete
Vgs Th Max ID
5V @ 250µA
Gate Charge Qg Max Vgs
22 nC @ 10 V
Vgs Max
±30V
Input Capacitance Ciss Max Vds
960 pF @ 25 V
Power Dissipation Max
140W (Tc)

Alternate Parts Comparison (FQP4N90C vs FQP7N80C vs KSD560YTU vs FDP085N10A-F102)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-220-3TO-220-3TO-220-3TO-220-3
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)150°C (TJ)-55°C ~ 175°C (TJ)
Lifecycle StatusObsoleteObsoleteActiveActive
DescriptionMOSFET N-CH 900V 4A TO220-3MOSFET N-CH 800V 6.6A TO220-3TRANS NPN DARL 100V 5A TO-220-3MOSFET N-CH 100V 96A TO220-3
Detailed DescriptionN-Channel 900 V 4A (Tc) 140W (Tc) Through Hole TO-220-3N-Channel 800 V 6.6A (Tc) 167W (Tc) Through Hole TO-220-3Bipolar (BJT) Transistor NPN - Darlington 100 V 5 A 1.5 W Through Hole TO-220-3N-Channel 100 V 96A (Tc) 188W (Tc) Through Hole TO-220-3
SeriesQFET®QFET®--PowerTrench®
Current Continuous Drain ID 25 C4A (Tc)6.6A (Tc)--96A (Tc)
Drain to Source Voltage Vdss900 V800 V--100 V
Drive Voltage Max Rds on Min Rds on10V10V--10V
Fet TypeN-ChannelN-Channel--N-Channel
Gate Charge Qg Max Vgs22 nC @ 10 V35 nC @ 10 V--40 nC @ 10 V
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