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onsemi IRF840BPBF MOSFETs

500V 8A N-CH MOSFET TO-220

1,040 ActiveonsemiTO-220-3$0.99
IRF840BPBF TO-220-3 package illustration

Same model may have multiple batches, images only for reference.

IRF840BPBF
Manufacturer
Part Number (MPN)
IRF840BPBF
Detailed Description
500V 8A N-CH MOSFET TO-220
Package
TO-220-3
Lifecycle Status
Active
Datasheet
PDF IRF840BPBF Datasheet
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Technical Specifications

onsemi IRF840BPBF MOSFETs technical specifications.

General

Series
IRF
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
Through Hole
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
500 V
ID Continuous Drain Current
8.7 A
Rds on Drain Source Resistance
850 mOhms
Vgs Gate Source Voltage
- 30 V, + 30 V

Related Parts Comparison (IRF840BPBF vs FCP104N60F vs FCP130N60 vs FDP075N15A-F102)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
SeriesIRFHiPerFET™, Polar™SuperFET® IIPowerTrench®
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
TechnologySiMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Package / Case--TO-220-3TO-220-3TO-220-3
Operating Temperature---55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Lifecycle Status--ActiveActiveActive
Current Continuous Drain ID 25 C--37A (Tc)28A (Tc)130A (Tc)
Drain to Source Voltage Vdss--600 V600 V150 V
Drive Voltage Max Rds on Min Rds on--10V10V10V
Fet Type--N-ChannelN-ChannelN-Channel
Gate Charge Qg Max Vgs--145 nC @ 10 V70 nC @ 10 V100 nC @ 10 V
Input Capacitance Ciss Max Vds--6130 pF @ 25 V3590 pF @ 380 V7350 pF @ 75 V
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