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onsemi FQP12N60C MOSFETs

600V 12A N-Channel Power MOSFET, TO-220, 650mR Rds(on)

4onsemiTO-220-3$10.38
FQP12N60C - No Image Available

Same model may have multiple batches, images only for reference.

FQP12N60C
Manufacturer
Part Number (MPN)
FQP12N60C
Detailed Description
600V 12A N-Channel Power MOSFET, TO-220, 650mR Rds(on)
Package
TO-220-3
Lifecycle Status
Obsolete
Datasheet
PDF FQP12N60C Datasheet
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Technical Specifications

onsemi FQP12N60C MOSFETs technical specifications.

General

Series
QFET®
Package / Case
TO-220-3
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Obsolete
Vgs Th Max ID
4V @ 250µA
Gate Charge Qg Max Vgs
63 nC @ 10 V
Vgs Max
±30V
Input Capacitance Ciss Max Vds
2290 pF @ 25 V
Power Dissipation Max
225W (Tc)

Alternate Parts Comparison (FQP12N60C vs FQP7N80C vs KSD560YTU vs FDP085N10A-F102)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-220-3TO-220-3TO-220-3TO-220-3
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)150°C (TJ)-55°C ~ 175°C (TJ)
Lifecycle StatusObsoleteObsoleteActiveActive
SeriesQFET®QFET®--PowerTrench®
Current Continuous Drain ID 25 C12A (Tc)6.6A (Tc)--96A (Tc)
Drain to Source Voltage Vdss600 V800 V--100 V
Drive Voltage Max Rds on Min Rds on10V10V--10V
Fet TypeN-ChannelN-Channel--N-Channel
Gate Charge Qg Max Vgs63 nC @ 10 V35 nC @ 10 V--40 nC @ 10 V
Input Capacitance Ciss Max Vds2290 pF @ 25 V1680 pF @ 25 V--2695 pF @ 50 V
Power Dissipation Max225W (Tc)167W (Tc)--188W (Tc)
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