onsemi FQP10N20C MOSFETs
N-Channel Power MOSFET, 200V, 9.5A, 360mR, TO-220
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
FQP10N20C
Detailed Description
N-Channel Power MOSFET, 200V, 9.5A, 360mR, TO-220
Package
TO-220-3
Lifecycle Status
Obsolete
Datasheet
FQP10N20C Datasheet
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Technical Specifications
onsemi FQP10N20C MOSFETs technical specifications.
General
Series
QFET®
Package / Case
TO-220-3
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Obsolete
Vgs Th Max ID
4V @ 250µA
Gate Charge Qg Max Vgs
26 nC @ 10 V
Vgs Max
±30V
Input Capacitance Ciss Max Vds
510 pF @ 25 V
Power Dissipation Max
72W (Tc)
Alternate Parts Comparison (FQP10N20C vs FQP7N80C vs KSD560YTU vs FDP085N10A-F102)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | 150°C (TJ) | -55°C ~ 175°C (TJ) |
| Lifecycle Status | Obsolete | Obsolete | Active | Active |
| Series | QFET® | QFET® | -- | PowerTrench® |
| Current Continuous Drain ID 25 C | 9.5A (Tc) | 6.6A (Tc) | -- | 96A (Tc) |
| Drain to Source Voltage Vdss | 200 V | 800 V | -- | 100 V |
| Drive Voltage Max Rds on Min Rds on | 10V | 10V | -- | 10V |
| Fet Type | N-Channel | N-Channel | -- | N-Channel |
| Gate Charge Qg Max Vgs | 26 nC @ 10 V | 35 nC @ 10 V | -- | 40 nC @ 10 V |
| Input Capacitance Ciss Max Vds | 510 pF @ 25 V | 1680 pF @ 25 V | -- | 2695 pF @ 50 V |
| Power Dissipation Max | 72W (Tc) | 167W (Tc) | -- | 188W (Tc) |
| Action |
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