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onsemi FQA9N90C-F109 MOSFETs

900V N-Channel MOSFET, 9A, 1.4Ω, TO-3P

50onsemiTO-3P$11.17
FQA9N90C-F109 - No Image Available

Same model may have multiple batches, images only for reference.

FQA9N90C-F109
Manufacturer
Part Number (MPN)
FQA9N90C-F109
Detailed Description
900V N-Channel MOSFET, 9A, 1.4Ω, TO-3P
Package
TO-3P
Lifecycle Status
Obsolete
Datasheet
PDF FQA9N90C-F109 Datasheet
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Technical Specifications

onsemi FQA9N90C-F109 MOSFETs technical specifications.

General

Series
QFET®
Package / Case
TO-3P-3, SC-65-3
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Obsolete
Vgs Th Max ID
5V @ 250µA
Gate Charge Qg Max Vgs
58 nC @ 10 V
Vgs Max
±30V
Input Capacitance Ciss Max Vds
2730 pF @ 25 V
Power Dissipation Max
280W (Tc)

Alternate Parts Comparison (FQA9N90C-F109 vs FQA13N80-F109 vs FQA11N90-F109 vs FQA28N50)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
SeriesQFET®----QFET®
Package / CaseTO-3P-3, SC-65-3----TO-3P-3, SC-65-3
Mounting TypeThrough Hole----Through Hole
Operating Temperature-55°C ~ 150°C (TJ)-----55°C ~ 150°C (TJ)
Lifecycle StatusObsolete----Obsolete
Current Continuous Drain ID 25 C9A (Tc)----28.4A (Tc)
Drain to Source Voltage Vdss900 V----500 V
Drive Voltage Max Rds on Min Rds on10V----10V
Fet TypeN-Channel----N-Channel
Gate Charge Qg Max Vgs58 nC @ 10 V----140 nC @ 10 V
Input Capacitance Ciss Max Vds2730 pF @ 25 V----5600 pF @ 25 V
Power Dissipation Max280W (Tc)----310W (Tc)
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