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onsemi FQA11N90-F109 MOSFETs

MOSFET N-CH 900V 11.4A TO-3P

464 ActiveonsemiTO-3P$11.29
FQA11N90-F109 TO-3P package illustration

Same model may have multiple batches, images only for reference.

FQA11N90-F109
Manufacturer
Part Number (MPN)
FQA11N90-F109
Detailed Description
MOSFET N-CH 900V 11.4A TO-3P
Package
TO-3P
Lifecycle Status
Active
Datasheet
PDF FQA11N90-F109 Datasheet
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Technical Specifications

onsemi FQA11N90-F109 MOSFETs technical specifications.

General

RoHS
Yes
Number of Pins
3
Mounting Type
Through Hole
Lifecycle Status
Active
Automotive
No
PPAP
No
Configuration
Single
Channel Mode
Enhancement
Channel Type
N
Number of Elements Per Chip
1

Alternate Parts Comparison (FQA11N90-F109 vs FQA28N50 vs FQA7N80C vs FQA9N90C-F109)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Lifecycle StatusActiveObsoleteObsoleteObsolete
Series--QFET®QFET®QFET®
Package / Case--TO-3P-3, SC-65-3TO-3P-3, SC-65-3TO-3P-3, SC-65-3
Operating Temperature---55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Current Continuous Drain ID 25 C--28.4A (Tc)7A (Tc)9A (Tc)
Drain to Source Voltage Vdss--500 V800 V900 V
Drive Voltage Max Rds on Min Rds on--10V10V10V
Fet Type--N-ChannelN-ChannelN-Channel
Gate Charge Qg Max Vgs--140 nC @ 10 V35 nC @ 10 V58 nC @ 10 V
Input Capacitance Ciss Max Vds--5600 pF @ 25 V1680 pF @ 25 V2730 pF @ 25 V
Power Dissipation Max--310W (Tc)198W (Tc)280W (Tc)
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