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onsemi FDP12N50NZ MOSFETs

N-Channel MOSFET, 500V, 11.5A, 520mΩ, TO-220

10onsemiTO-220-3$8.11
FDP12N50NZ - No Image Available

Same model may have multiple batches, images only for reference.

FDP12N50NZ
Manufacturer
Part Number (MPN)
FDP12N50NZ
Detailed Description
N-Channel MOSFET, 500V, 11.5A, 520mΩ, TO-220
Package
TO-220-3
Lifecycle Status
Obsolete
Datasheet
PDF FDP12N50NZ Datasheet
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Technical Specifications

onsemi FDP12N50NZ MOSFETs technical specifications.

General

Series
UniFET-II™
Package / Case
TO-220-3
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Obsolete
Vgs Th Max ID
5V @ 250µA
Gate Charge Qg Max Vgs
30 nC @ 10 V
Vgs Max
±25V
Input Capacitance Ciss Max Vds
1235 pF @ 25 V
Power Dissipation Max
170W (Tc)

Alternate Parts Comparison (FDP12N50NZ vs FDP085N10A-F102 vs FDP4D5N10C vs FDP045N10A-F102)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
SeriesUniFET-II™PowerTrench®PowerTrench®PowerTrench®
Package / CaseTO-220-3TO-220-3TO-220-3TO-220-3
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)
Lifecycle StatusObsoleteActiveActiveActive
Current Continuous Drain ID 25 C11.5A (Tc)96A (Tc)128A (Tc)120A (Tc)
Drain to Source Voltage Vdss500 V100 V100 V100 V
Drive Voltage Max Rds on Min Rds on10V10V10V10V
Fet TypeN-ChannelN-ChannelN-ChannelN-Channel
Gate Charge Qg Max Vgs30 nC @ 10 V40 nC @ 10 V68 nC @ 10 V74 nC @ 10 V
Input Capacitance Ciss Max Vds1235 pF @ 25 V2695 pF @ 50 V5065 pF @ 50 V5270 pF @ 50 V
Power Dissipation Max170W (Tc)188W (Tc)2.4W (Ta), 150W (Tc)263W (Tc)
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