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onsemi FDMS4D4N08C MOSFETs

MOSFETs PTNG 80/20V Nch Power Trench MOSFET

4 Activeonsemi8-PQFN (5x6), Power56$3.02
FDMS4D4N08C - No Image Available

Same model may have multiple batches, images only for reference.

FDMS4D4N08C
Manufacturer
Part Number (MPN)
FDMS4D4N08C
Detailed Description
MOSFETs PTNG 80/20V Nch Power Trench MOSFET
Package
8-PQFN (5x6), Power56
Lifecycle Status
Active
Datasheet
PDF FDMS4D4N08C Datasheet
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Technical Specifications

onsemi FDMS4D4N08C MOSFETs technical specifications.

General

Series
PowerTrench®
Package / Case
8-PowerTDFN
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Vgs Th Max ID
4V @ 250µA
Gate Charge Qg Max Vgs
56 nC @ 10 V
Vgs Max
±20V
Input Capacitance Ciss Max Vds
4090 pF @ 40 V
Power Dissipation Max
125W (Tc)

Alternate Parts Comparison (FDMS4D4N08C vs FDMS004N08C vs FDMS4D0N12C vs FDMS86150A)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
SeriesPowerTrench®PowerTrench®PowerTrench®PowerTrench®
Package / Case8-PowerTDFN8-PowerTDFN8-PowerTDFN8-PowerTDFN
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Lifecycle StatusActiveActiveActiveActive
Current Continuous Drain ID 25 C123A (Tc)126A (Tc)18.5A (Ta), 114A (Tc)16A (Ta), 60A (Tc)
Description--------
Detailed Description--------
Drain to Source Voltage Vdss80 V80 V120 V100 V
Drive Voltage Max Rds on Min Rds on6V, 10V6V, 10V6V, 10V6V, 10V
Fet TypeN-ChannelN-ChannelN-ChannelN-Channel
Gate Charge Qg Max Vgs56 nC @ 10 V55 nC @ 10 V82 nC @ 10 V66 nC @ 10 V
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