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onsemi FDMS86150A MOSFETs

Power Field-Effect Transistor

5,500 ActiveonsemiPower56$10.16
FDMS86150A Power56 package illustration

Same model may have multiple batches, images only for reference.

FDMS86150A
Manufacturer
Part Number (MPN)
FDMS86150A
Detailed Description
Power Field-Effect Transistor
Package
Power56
Lifecycle Status
Active
Datasheet
PDF FDMS86150A Datasheet
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Technical Specifications

onsemi FDMS86150A MOSFETs technical specifications.

General

Series
PowerTrench®
RoHS
Yes
Package / Case
8-PowerTDFN
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Rds on Max ID Vgs
4.85mOhm @ 16A, 10V
Vgs Th Max ID
4V @ 250µA
Gate Charge Qg Max Vgs
66 nC @ 10 V
Vgs Max
±20V

Alternate Parts Comparison (FDMS86150A vs FDMS003N08C vs FDMS86180 vs FDMS2D5N08C)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
SeriesPowerTrench®PowerTrench®PowerTrench®PowerTrench®
Package / Case8-PowerTDFN8-PowerTDFN8-PowerTDFN8-PowerTDFN
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Lifecycle StatusActiveActiveActiveActive
Current Continuous Drain ID 25 C16A (Ta), 60A (Tc)22A (Ta), 147A (Tc)151A (Tc)166A (Tc)
Drain to Source Voltage Vdss100 V80 V100 V80 V
Drive Voltage Max Rds on Min Rds on6V, 10V6V, 10V6V, 10V6V, 10V
Fet TypeN-ChannelN-ChannelN-ChannelN-Channel
Gate Charge Qg Max Vgs66 nC @ 10 V73 nC @ 10 V54 nC @ 6 V84 nC @ 10 V
Input Capacitance Ciss Max Vds4665 pF @ 50 V5350 pF @ 40 V6215 pF @ 50 V6240 pF @ 40 V
Power Dissipation Max2.7W (Ta), 113W (Tc)2.7W (Ta), 125W (Tc)138W (Tc)138W (Tc)
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