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onsemi ECH8310-TL-H MOSFETs

P-Channel Power MOSFET, -30 V, -9 A, 17 mΩ, SOT-28FL / ECH8, 3000-REEL

11,246 Activeonsemi8-ECH$2.55
ECH8310-TL-H - No Image Available

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ECH8310-TL-H
Manufacturer
Part Number (MPN)
ECH8310-TL-H
Detailed Description
P-Channel Power MOSFET, -30 V, -9 A, 17 mΩ, SOT-28FL / ECH8, 3000-REEL
Package
8-ECH
Lifecycle Status
Active
Datasheet
PDF ECH8310-TL-H Datasheet
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Technical Specifications

onsemi ECH8310-TL-H MOSFETs technical specifications.

General

Package / Case
8-SMD, Flat Leads
Mounting Type
Surface Mount
Operating Temperature
150°C (TJ)
Lifecycle Status
Active
Gate Charge Qg Max Vgs
28 nC @ 10 V
Vgs Max
±20V
Input Capacitance Ciss Max Vds
1400 pF @ 10 V
Power Dissipation Max
1.5W (Ta)
Fet Type
P-Channel
Technology
MOSFET (Metal Oxide)

Alternate Parts Comparison (ECH8310-TL-H vs ECH8655R-TL-H vs ECH8661-TL-H vs ECH8660-TL-H)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / Case8-SMD, Flat Leads8-SMD, Flat Leads8-SMD, Flat Leads8-SMD, Flat Leads
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature150°C (TJ)150°C (TJ)150°C (TJ)150°C (TJ)
Lifecycle StatusActiveActiveActiveActive
Current Continuous Drain ID 25 C9A (Ta)9A7A, 5.5A4.5A
Description--------
Detailed Description--------
Drain to Source Voltage Vdss30 V24V30V30V
Gate Charge Qg Max Vgs28 nC @ 10 V16.8nC @ 10V11.8nC @ 10V4.4nC @ 10V
Rds on Max ID Vgs17mOhm @ 4.5A, 10V17mOhm @ 4.5A, 4.5V24mOhm @ 3.5A, 10V59mOhm @ 2A, 10V
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Input Capacitance Ciss Max Vds1400 pF @ 10 V--710pF @ 10V240pF @ 10V
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