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onsemi ECH8660-TL-H MOSFETs

Complementary Dual Power MOSFET, -30V, -4.5A, 59mΩ, SOT-28FL / ECH8, 3000-REEL

59 Activeonsemi8-SMD, Flat Leads$1.89
ECH8660-TL-H - No Image Available

Same model may have multiple batches, images only for reference.

ECH8660-TL-H
Manufacturer
Part Number (MPN)
ECH8660-TL-H
Detailed Description
Complementary Dual Power MOSFET, -30V, -4.5A, 59mΩ, SOT-28FL / ECH8, 3000-REEL
Package
8-SMD, Flat Leads
Lifecycle Status
Active
Datasheet
PDF ECH8660-TL-H Datasheet
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Technical Specifications

onsemi ECH8660-TL-H MOSFETs technical specifications.

General

Package / Case
8-SMD, Flat Leads
Mounting Type
Surface Mount
Operating Temperature
150°C (TJ)
Lifecycle Status
Active
Rds on Max ID Vgs
59mOhm @ 2A, 10V
Gate Charge Qg Max Vgs
4.4nC @ 10V
Input Capacitance Ciss Max Vds
240pF @ 10V
Power Max
1.5W
Technology
MOSFET (Metal Oxide)
Configuration
N and P-Channel

Alternate Parts Comparison (ECH8660-TL-H vs ECH8310-TL-H vs ECH8315-TL-H vs ECH8308-TL-H)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / Case8-SMD, Flat Leads8-SMD, Flat Leads8-SMD, Flat Leads8-SMD, Flat Leads
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature150°C (TJ)150°C (TJ)150°C (TJ)150°C (TJ)
Lifecycle StatusActiveActiveActiveActive
Current Continuous Drain ID 25 C4.5A9A (Ta)7.5A (Ta)10A (Ta)
Drain to Source Voltage Vdss30V30 V30 V12 V
Gate Charge Qg Max Vgs4.4nC @ 10V28 nC @ 10 V18 nC @ 10 V26 nC @ 4.5 V
Input Capacitance Ciss Max Vds240pF @ 10V1400 pF @ 10 V875 pF @ 10 V2300 pF @ 6 V
Rds on Max ID Vgs59mOhm @ 2A, 10V17mOhm @ 4.5A, 10V25mOhm @ 3.5A, 10V12.5mOhm @ 5A, 4.5V
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Drive Voltage Max Rds on Min Rds on--4V, 10V4V, 10V1.8V, 4.5V
Fet Type--P-ChannelP-ChannelP-Channel
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