onsemi DTA123JET1G BJTs
PNP Bipolar Digital Transistor (BRT), SC-75 (SOT-416) 3 LEAD, 3000-REEL
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
DTA123JET1G
Detailed Description
PNP Bipolar Digital Transistor (BRT), SC-75 (SOT-416) 3 LEAD, 3000-REEL
Package
SC-75, SOT-416
Lifecycle Status
Active
Datasheet
DTA123JET1G Datasheet
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Technical Specifications
onsemi DTA123JET1G BJTs technical specifications.
General
RoHS
True
Package / Case
SC-75, SOT-416
Mounting Type
Surface Mount
Lifecycle Status
Active
Resistor Emitter Base R2
47 kOhms
Dc Current Gain Hfe Min IC Vce
80 @ 5mA, 10V
Vce Saturation Max Ib IC
250mV @ 300µA, 10mA
Current Collector Cutoff Max
500nA
Transistor Type
PNP - Pre-Biased
Power Max
200 mW
Alternate Parts Comparison (DTA123JET1G vs DTA124XET1G vs 2SA1774 vs 2SC4617)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | SC-75, SOT-416 | SC-75, SOT-416 | SC-75, SOT-416 | SC-75, SOT-416 |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Lifecycle Status | Active | Active | Obsolete | Obsolete |
| Current Collector Cutoff Max | 500nA | 500nA | 500nA (ICBO) | 500nA (ICBO) |
| Current Collector IC Max | 100 mA | 100 mA | 100 mA | 100 mA |
| Dc Current Gain Hfe Min IC Vce | 80 @ 5mA, 10V | 80 @ 5mA, 10V | 120 @ 1mA, 6V | 120 @ 1mA, 6V |
| Power Max | 200 mW | 200 mW | 150 mW | 125 mW |
| Transistor Type | PNP - Pre-Biased | PNP - Pre-Biased | PNP | NPN |
| Vce Saturation Max Ib IC | 250mV @ 300µA, 10mA | 250mV @ 1mA, 10mA | 500mV @ 5mA, 50mA | 400mV @ 5mA, 60mA |
| Voltage Collector Emitter Breakdown Max | 50 V | 50 V | 50 V | 50 V |
| Action |
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