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onsemi DTA114YET1G BJTs

PNP Bipolar Digital Transistor (BRT), SC-75 (SOT-416) 3 LEAD, 3000-REEL

30 ActiveonsemiSC-75, SOT-416$0.15
DTA114YET1G SC-75, SOT-416 package illustration

Same model may have multiple batches, images only for reference.

DTA114YET1G
Manufacturer
Part Number (MPN)
DTA114YET1G
Detailed Description
PNP Bipolar Digital Transistor (BRT), SC-75 (SOT-416) 3 LEAD, 3000-REEL
Package
SC-75, SOT-416
Lifecycle Status
Active
Datasheet
PDF DTA114YET1G Datasheet
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Technical Specifications

onsemi DTA114YET1G BJTs technical specifications.

General

RoHS
Yes
Package / Case
SC-75, SOT-416
Mounting Type
Surface Mount
Lifecycle Status
Active
Resistor Emitter Base R2
47 kOhms
Dc Current Gain Hfe Min IC Vce
80 @ 5mA, 10V
Vce Saturation Max Ib IC
250mV @ 300µA, 10mA
Current Collector Cutoff Max
500nA
Transistor Type
PNP - Pre-Biased
Power Max
200 mW

Alternate Parts Comparison (DTA114YET1G vs DTA124XET1G vs 2SA1774 vs 2SC4617)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseSC-75, SOT-416SC-75, SOT-416SC-75, SOT-416SC-75, SOT-416
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Lifecycle StatusActiveActiveObsoleteObsolete
Current Collector Cutoff Max500nA500nA500nA (ICBO)500nA (ICBO)
Current Collector IC Max100 mA100 mA100 mA100 mA
Dc Current Gain Hfe Min IC Vce80 @ 5mA, 10V80 @ 5mA, 10V120 @ 1mA, 6V120 @ 1mA, 6V
Power Max200 mW200 mW150 mW125 mW
Transistor TypePNP - Pre-BiasedPNP - Pre-BiasedPNPNPN
Vce Saturation Max Ib IC250mV @ 300µA, 10mA250mV @ 1mA, 10mA500mV @ 5mA, 50mA400mV @ 5mA, 60mA
Voltage Collector Emitter Breakdown Max50 V50 V50 V50 V
Action

Cross Reference

Manufacturer-stated alternates from official cross-reference tools. These are not a guaranteed pin-compatible drop-in. Qualify package, pinout, and electrical limits against the datasheet before a board change. See cross-reference vs drop-in compatible .

This part is listed as a cross for

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