onsemi BC857S BJTs
PNP BJT Transistor, 45V VCEO, 200mA IC, 200MHz, SC, SMT
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
BC857S
Detailed Description
PNP BJT Transistor, 45V VCEO, 200mA IC, 200MHz, SC, SMT
Package
6-TSSOP, SC-88, SOT-363
Lifecycle Status
Obsolete
Datasheet
BC857S Datasheet
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Technical Specifications
onsemi BC857S BJTs technical specifications.
General
Package / Case
6-TSSOP
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Obsolete
Dc Current Gain Hfe Min IC Vce
125 @ 2mA, 5V
Power Max
300mW
Frequency Transition
200MHz
Transistor Type
2 PNP (Dual)
Current Collector IC Max
200mA
Voltage Collector Emitter Breakdown Max
45V
Alternate Parts Comparison (BC857S vs BC847CDW1T1G vs BC847CLT1G vs BC847ALT1G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Number of Pins | -- | 6 | 3 | 3 |
| RoHS | -- | Compliant | Compliant | Compliant |
| Lifecycle Status | Obsolete | Production | Production | Production |
| China ROHS | -- | Compliant | Compliant | Compliant |
| Collector Base Voltage Vcbo | -- | 50 V | 50 V | 50 V |
| Collector Emitter Breakdown Voltage | -- | 45 V | 45 V | 45 V |
| Collector Emitter Saturation Voltage | -- | 600 mV | 600 mV | 600 mV |
| Collector Emitter Voltage Vceo | -- | 45 V | 45 V | 45 V |
| Contact Plating | -- | Tin | Tin | Tin |
| Current Rating | -- | 100 mA | 100 mA | 100 mA |
| Element Configuration | -- | Dual | Single | Single |
| Action |
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