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onsemi 50A02MH-TL-E BJTs

Bipolar Transistor, -50V, -0.5A, Low VCE(sat), PNP Single MCPH3, SC 70FL / MCPH3, 3000-REEL

324,000 Activeonsemi3-SMD, Flat Leads$0.16
50A02MH-TL-E 3-SMD, Flat Leads package illustration

Same model may have multiple batches, images only for reference.

50A02MH-TL-E
Manufacturer
Part Number (MPN)
50A02MH-TL-E
Detailed Description
Bipolar Transistor, -50V, -0.5A, Low VCE(sat), PNP Single MCPH3, SC 70FL / MCPH3, 3000-REEL
Package
3-SMD, Flat Leads
Lifecycle Status
Active
Datasheet
PDF 50A02MH-TL-E Datasheet
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Technical Specifications

onsemi 50A02MH-TL-E BJTs technical specifications.

General

Package / Case
3-SMD, Flat Leads
Mounting Type
Surface Mount
Operating Temperature
150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
200 @ 10mA, 2V
Power Max
600 mW
Frequency Transition
690MHz
Transistor Type
PNP
Current Collector IC Max
500 mA
Voltage Collector Emitter Breakdown Max
50 V

Related Parts Comparison (50A02MH-TL-E vs MBT3906DW1T1G vs BC847CDW1T1G vs BC847CLT1G)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
Package / Case3-SMD, Flat Leads6-TSSOP6-TSSOPTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Lifecycle StatusActiveProductionProductionProduction
Current Collector IC Max500 mA200mA100mA100 mA
Dc Current Gain Hfe Min IC Vce200 @ 10mA, 2V100 @ 10mA, 1V420 @ 2mA, 5V420 @ 2mA, 5V
Power Max600 mW150mW380mW300 mW
Transistor TypePNP2 PNP (Dual)2 NPN (Dual)NPN
Vce Saturation Max Ib IC120mV @ 10mA, 100mA400mV @ 5mA, 50mA600mV @ 5mA, 100mA600mV @ 5mA, 100mA
Voltage Collector Emitter Breakdown Max50 V40V45V45 V
Current Collector Cutoff Max100nA (ICBO)--15nA (ICBO)15nA (ICBO)
Number of Pins--663
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