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onsemi 50A02MH-TL-E BJTs

Bipolar Transistor, -50V, -0.5A, Low VCE(sat), PNP Single MCPH3, SC 70FL / MCPH3, 3000-REEL

324,000 Activeonsemi3-SMD, Flat Leads$0.16
50A02MH-TL-E - No Image Available

Same model may have multiple batches, images only for reference.

50A02MH-TL-E
Manufacturer
Part Number (MPN)
50A02MH-TL-E
Detailed Description
Bipolar Transistor, -50V, -0.5A, Low VCE(sat), PNP Single MCPH3, SC 70FL / MCPH3, 3000-REEL
Package
3-SMD, Flat Leads
Lifecycle Status
Active
Datasheet
PDF 50A02MH-TL-E Datasheet
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Technical Specifications

onsemi 50A02MH-TL-E BJTs technical specifications.

General

Package / Case
3-SMD, Flat Leads
Mounting Type
Surface Mount
Operating Temperature
150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
200 @ 10mA, 2V
Power Max
600 mW
Frequency Transition
690MHz
Transistor Type
PNP
Current Collector IC Max
500 mA
Voltage Collector Emitter Breakdown Max
50 V

Alternate Parts Comparison (50A02MH-TL-E vs MBT3906DW1T1G vs BC847CDW1T1G vs BC847CLT1G)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Operating Temperature150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Number of Pins--663
RoHS--CompliantCompliantCompliant
Lifecycle StatusActiveActiveActiveActive
China ROHS--CompliantCompliantCompliant
Collector Base Voltage Vcbo--40 V50 V50 V
Collector Emitter Breakdown Voltage--40 V45 V45 V
Collector Emitter Saturation Voltage---400 mV600 mV600 mV
Collector Emitter Voltage Vceo--40 V45 V45 V
Contact Plating--TinTinTin
Current Rating---200 mA100 mA100 mA
Element Configuration--DualDualSingle
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