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onsemi 30A02MH-TL-E BJTs

Bipolar Transistor, -30V, -0.7A, Low VCE(sat), PNP Single MCPH3, SC 70FL / MCPH3, 3000-REEL

378,000 Activeonsemi30A023-SMD, Flat Leads$0.15
30A02MH-TL-E - No Image Available

Same model may have multiple batches, images only for reference.

30A02MH-TL-E
Manufacturer
Part Number (MPN)
30A02MH-TL-E
Base Model
Detailed Description
Bipolar Transistor, -30V, -0.7A, Low VCE(sat), PNP Single MCPH3, SC 70FL / MCPH3, 3000-REEL
Package
3-SMD, Flat Leads
Lifecycle Status
Active
Datasheet
PDF 30A02MH-TL-E Datasheet
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Ordering Code Family

30A02 groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

2 ordering variants listed on the family page.

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Technical Specifications

onsemi 30A02MH-TL-E BJTs technical specifications.

General

Package / Case
3-SMD, Flat Leads
Mounting Type
Surface Mount
Operating Temperature
150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
200 @ 10mA, 2V
Power Max
600 mW
Frequency Transition
520MHz
Transistor Type
PNP
Current Collector IC Max
700 mA
Voltage Collector Emitter Breakdown Max
30 V

Alternate Parts Comparison (30A02MH-TL-E vs MBT3906DW1T1G vs BC847CDW1T1G vs BC847CLT1G)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Operating Temperature150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Number of Pins--663
RoHS--CompliantCompliantCompliant
Lifecycle StatusActiveActiveActiveActive
China ROHS--CompliantCompliantCompliant
Collector Base Voltage Vcbo--40 V50 V50 V
Collector Emitter Breakdown Voltage--40 V45 V45 V
Collector Emitter Saturation Voltage---400 mV600 mV600 mV
Collector Emitter Voltage Vceo--40 V45 V45 V
Contact Plating--TinTinTin
Current Rating---200 mA100 mA100 mA
Element Configuration--DualDualSingle
Action

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