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onsemi 2SC5415AE-TD-E RF BJT

RF Transistor NPN 12V 100mA 6.7GHz 800mW Surface Mount PCP

20,200onsemiTO-243AA$0.41
2SC5415AE-TD-E - No Image Available

Same model may have multiple batches, images only for reference.

2SC5415AE-TD-E
Manufacturer
Part Number (MPN)
2SC5415AE-TD-E
Detailed Description
RF Transistor NPN 12V 100mA 6.7GHz 800mW Surface Mount PCP
Package
TO-243AA
Lifecycle Status
Obsolete
Datasheet
PDF 2SC5415AE-TD-E Datasheet
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Technical Specifications

onsemi 2SC5415AE-TD-E RF BJT technical specifications.

General

Package / Case
TO-243AA
Mounting Type
Surface Mount
Operating Temperature
150°C (TJ)
Lifecycle Status
Obsolete
Power Max
800mW
Dc Current Gain Hfe Min IC Vce
90 @ 30mA, 5V
Current Collector IC Max
100mA
Transistor Type
NPN
Voltage Collector Emitter Breakdown Max
12V
Frequency Transition
6.7GHz

Alternate Parts Comparison (2SC5415AE-TD-E vs MCH4021-TL-E)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate Parts
Package / CaseTO-243AA4-SMD, Flat Leads
Mounting TypeSurface MountSurface Mount
Operating Temperature150°C (TJ)150°C (TJ)
Current Collector IC Max100mA150mA
Dc Current Gain Hfe Min IC Vce90 @ 30mA, 5V60 @ 50mA, 5V
Detailed Description----
Frequency Transition6.7GHz16GHz
Gain9dB17.5dB
Noise Figure Db Typ F1.1dB @ 1GHz1.2dB @ 1GHz
Other Names--MCH4021-TL-E-ND MCH4021-TL-EOSTR
Power Max800mW400mW
Transistor TypeNPNNPN
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