onsemi 2N5551TFR BJTs
Bipolar Transistors - BJT NPN Transistor General Purpose
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
2N5551TFR
Detailed Description
Bipolar Transistors - BJT NPN Transistor General Purpose
Package
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Lifecycle Status
Active
Datasheet
2N5551TFR Datasheet
Quick Jump:
Technical Specifications
onsemi 2N5551TFR BJTs technical specifications.
General
RoHS
Yes
Package / Case
TO-226-3, TO-92-3
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
80 @ 10mA, 5V
Power Max
625 mW
Frequency Transition
100MHz
Transistor Type
NPN
Current Collector IC Max
600 mA
Related Parts Comparison (2N5551TFR vs MBT3906DW1T1G vs BC847CDW1T1G vs BC847CLT1G)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| Package / Case | TO-226-3, TO-92-3 | 6-TSSOP | 6-TSSOP | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Through Hole | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| RoHS | Yes | Compliant | Compliant | Compliant |
| Lifecycle Status | Active | Production | Production | Production |
| Case Outline | 135AR | 419B-02 | 419B-02 | 318-08 |
| Compliance | PbAHP | PbAHP | PbAHP | PbAHP |
| Container Qty | 2000 | 3000 | 3000 | 3000 |
| Container Type | REEL | REEL | REEL | REEL |
| Current Collector IC Max | 600 mA | 200mA | 100mA | 100 mA |
| Dc Current Gain Hfe Min IC Vce | 80 @ 10mA, 5V | 100 @ 10mA, 1V | 420 @ 2mA, 5V | 420 @ 2mA, 5V |
| Ft Min Mhz | 100 | 250 | 100 | 100 |
| Action |
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