NXP Semiconductors PXTA42,115 BJTs
NPN high-voltage transistor
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
PXTA42,115
Detailed Description
NPN high-voltage transistor
Package
SOT-89
Lifecycle Status
Active
Datasheet
PXTA42,115 Datasheet
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Technical Specifications
NXP Semiconductors PXTA42,115 BJTs technical specifications.
General
RoHS
Yes
Mounting Type
SMD/SMT
Operating Temperature
- 65°C ~ + 150°C
Transistor Polarity
NPN
Configuration
Single
Collector Emitter Voltage Vceo Max
300 V
Collector Base Voltage Vcbo
300 V
Emitter Base Voltage Vebo
6 V
Collector Emitter Saturation Voltage
500 mV
Maximum Dc Collector Current
100 mA
Related Parts Comparison (PXTA42,115 vs PBSS302PX,115 vs PXT4403,115 vs PBSS304PX)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | SOT-89 | SOT-89-3 | SOT-89 | SOT-89 |
| Mounting Type | SMD/SMT | -- | -- | -- |
| Operating Temperature | - 65°C ~ + 150°C | -- | -- | -- |
| Collector Base Voltage Vcbo | 300 V | -- | -- | -- |
| Collector Emitter Saturation Voltage | 500 mV | -- | -- | -- |
| Collector Emitter Voltage Vceo Max | 300 V | -- | -- | -- |
| Configuration | Single | -- | -- | -- |
| Dc Collector Base Gain Hfe Min | 25 at 1 mA, 10 V, 40 at 10 mA, 10 V, 40 at 30 mA, 10 V | -- | -- | -- |
| Dc Current Gain Hfe Max | 25 at 1 mA, 10 V | -- | -- | -- |
| Emitter Base Voltage Vebo | 6 V | -- | -- | -- |
| Gain Bandwidth Product Ft | 50 MHz | -- | -- | -- |
| Action |
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