NXP Semiconductors PHPT60610PYX BJTs
PHPT60610PY - 60 V, 10A PNP HIGH
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
PHPT60610PYX
Detailed Description
PHPT60610PY - 60 V, 10A PNP HIGH
Lifecycle Status
Active
Datasheet
PHPT60610PYX Datasheet
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Technical Specifications
NXP Semiconductors PHPT60610PYX BJTs technical specifications.
General
RoHS
Yes
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 175°C
Transistor Polarity
PNP
Configuration
Single
Collector Emitter Voltage Vceo Max
60 V
Collector Base Voltage Vcbo
60 V
Emitter Base Voltage Vebo
8 V
Collector Emitter Saturation Voltage
290 mV
Maximum Dc Collector Current
10 A
Related Parts Comparison (PHPT60610PYX vs PHPT60603NYX vs PBSS4140T,235 vs BC847AMB,315)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| RoHS | Yes | Compliant with Exemption | Yes | Yes |
| Mounting Type | SMD/SMT | Surface Mount | -- | -- |
| Operating Temperature | - 55°C ~ + 175°C | 175°C (TJ) | -- | -- |
| Collector Base Voltage Vcbo | 60 V | 60 V | -- | -- |
| Collector Emitter Saturation Voltage | 290 mV | 120 mV | -- | -- |
| Configuration | Single | Single Triple Emitter | -- | -- |
| Continuous Collector Current | - 10 A | 3 A | -- | -- |
| Emitter Base Voltage Vebo | 8 V | 7 V | -- | -- |
| Collector Emitter Voltage Vceo Max | 60 V | -- | -- | -- |
| Dc Collector Base Gain Hfe Min | 120 | -- | -- | -- |
| Dc Current Gain Hfe Max | 215 at - 500 mA, - 2 V | -- | -- | -- |
| Gain Bandwidth Product Ft | 85 MHz | -- | -- | -- |
| Action |
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