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NXP Semiconductors PDTB123ET,215 BJTs

Low VCEsat (BISS) transistors

150,000 ActiveNXP SemiconductorsSOT23-3$0.08
PDTB123ET,215 SOT23-3 package illustration

Same model may have multiple batches, images only for reference.

PDTB123ET,215
Manufacturer
Part Number (MPN)
PDTB123ET,215
Detailed Description
Low VCEsat (BISS) transistors
Package
SOT23-3
Lifecycle Status
Active
Datasheet
PDF PDTB123ET,215 Datasheet
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Technical Specifications

NXP Semiconductors PDTB123ET,215 BJTs technical specifications.

General

RoHS
Yes
Type Number
PDTB123ET
Size Mm
2.9 x 1.3 x 1
IO Max Ma
500
R1 Typ K
2.2
R2 Typ K
2.2
Channel Type
PNP
Ptot Mw
250
Vceo V
50
Packing
SOT23_215

Alternate Parts Comparison (PDTB123ET,215 vs PDTB123YT,215 vs PMBT3906,235 vs BC858B,215)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
RoHSYesYesYesYes
Chemical ContentPDTB123ETPDTB123YTPMBT3906BC858B
PackageSOT23-3SOT23-3SOT23-3SOT23-3
Ptot Mw250250250250
Type NumberPDTB123ETPDTB123YTPMBT3906BC858B
Automotive Qualified--NYY
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