NXP Semiconductors BSR302N BJTs
TRANS PNP 60V 1A SOT89
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
BSR302N
Detailed Description
TRANS PNP 60V 1A SOT89
Lifecycle Status
Active
Datasheet
BSR302N Datasheet
Quick Jump:
Technical Specifications
NXP Semiconductors BSR302N BJTs technical specifications.
General
Number of Pins
3
Additional Feature
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating Eas
30 mJ
Configuration
SINGLE WITH BUILT-IN DIODE
Ds Breakdown Voltage Min
30 V
Drain Current Max ID
3.7 A
Drain Source on Resistance Max
0.023 Ω
Fet Technology
METAL-OXIDE SEMICONDUCTOR
ID Max
3.7 A
Idpuls Max
14.7 A
Related Parts Comparison (BSR302N vs BSR31,115 vs BSR19A,215 vs BCM62B,215)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| Configuration | SINGLE WITH BUILT-IN DIODE | Single | -- | Dual |
| Number of Pins | 3 | -- | -- | -- |
| Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | -- | -- | -- |
| Avalanche Energy Rating Eas | 30 mJ | -- | -- | -- |
| Drain Current Max ID | 3.7 A | -- | -- | -- |
| Drain Source on Resistance Max | 0.023 Ω | -- | -- | -- |
| Ds Breakdown Voltage Min | 30 V | -- | -- | -- |
| Fet Technology | METAL-OXIDE SEMICONDUCTOR | -- | -- | -- |
| ID Max | 3.7 A | -- | -- | -- |
| Idpuls Max | 14.7 A | -- | -- | -- |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | -- | -- | -- |
| Jesd 30 Code | R-PDSO-G3 | -- | -- | -- |
| Action |
More Parts in BJTs
Browse additional parts from the same category, grouped by series, package type, and manufacturer. These are catalog suggestions — not verified pin-compatible alternates.
