NXP Semiconductors BSP613PH6327 BJTs
TRANS PNP DARL 60V 1A SOT223
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
BSP613PH6327
Detailed Description
TRANS PNP DARL 60V 1A SOT223
Package
SOT-223-4
Lifecycle Status
Active
Datasheet
BSP613PH6327 Datasheet
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Technical Specifications
NXP Semiconductors BSP613PH6327 BJTs technical specifications.
General
RoHS
Yes
Feature Configuration
Single Dual Drain
Feature Channel Mode
Enhancement
Feature Channel Type
P
Feature Number of Elements Per Chip
1
Feature Maximum Drain Source Voltage V
60
Feature Maximum Gate Source Voltage V
±20
Feature Maximum Continuous Drain Current a
2.9
Feature Maximum Drain Source Resistance Mohm
130@10V
Feature Typical Gate Charge Vgs Nc
22@10V
Alternate Parts Comparison (BSP613PH6327 vs BSP220 vs BSP122 vs BSP41)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Compliant | -- | -- |
| Feature Channel Mode | Enhancement | -- | -- | -- |
| Feature Channel Type | P | -- | -- | -- |
| Feature Configuration | Single Dual Drain | -- | -- | -- |
| Feature Maximum Continuous Drain Current a | 2.9 | -- | -- | -- |
| Feature Maximum Drain Source Resistance Mohm | 130@10V | -- | -- | -- |
| Feature Maximum Drain Source Voltage V | 60 | -- | -- | -- |
| Feature Maximum Gate Source Voltage V | ±20 | -- | -- | -- |
| Feature Maximum Power Dissipation Mw | 1800 | -- | -- | -- |
| Feature Military | No | -- | -- | -- |
| Feature Number of Elements Per Chip | 1 | -- | -- | -- |
| Feature Svhc Exceeds Threshold | No | -- | -- | -- |
| Action |
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