Nexperia BUK965R4-40E,118 MOSFETs
N-channel Power MOSFET, single element, enhancement mode, TMOS process technology.
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
BUK965R4-40E,118
Base Model
Detailed Description
N-channel Power MOSFET, single element, enhancement mode, TMOS process technology. Features 40V maximum drain-source voltage and 75A maximum continuous drain current. Surface mount D2PAK package with 3 pins (2+tab), offering 4.4 mOhm maximum drain-source resistance at 10V. Operates across a wide temperature range from -55°C to 175°C, with a maximum power dissipation of 137000 mW.
Package
D2PAK
Key Features
Package: D2PAK
Lifecycle Status
Obsolete
RoHS State
Yes with Exemption
Datasheet
BUK965R4-40E,118 Datasheet
Quick Jump:
Technical Specifications
Nexperia BUK965R4-40E,118 MOSFETs technical specifications.
General
RoHS
Yes with Exemption
Number of Pins
3
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C
Lifecycle Status
Obsolete
Package
D2PAK
Pcb
2
Tab
Tab
Package Length Mm
10.3(Max)
Package Width Mm
9.4(Max)
Alternate Parts Comparison (BUK965R4-40E,118 vs BUK965R4-40E vs BUK762R9-40E,118 vs BUK761R7-40E,118)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -55°C ~ 175°C | -55°C ~ 175°C | -55°C ~ 175°C | -55°C ~ 175°C |
| Number of Pins | 3 | 3 | 3 | 3 |
| RoHS | Yes with Exemption | Yes with Exemption | Yes with Exemption | Yes with Exemption |
| AEC Qualified | Yes | Yes | Yes | Yes |
| Automotive | Yes | Yes | Yes | Yes |
| Cage Code | H2HX9 | H2HX9 | H2HX9 | H2HX9 |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Channel Type | N | N | N | N |
| Configuration | Single | Single | Single | Single |
| Maximum Continuous Drain Current | 75A | 75A | 100A | 120A |
| Maximum Drain Source Resistance | 4.4@10VmOhm | 4.4@10VmOhm | 2.9@10VmOhm | 1.6@10VmOhm |
| Action |
Nexperia BUK965R4-40E,118 MOSFETs Overview
N-channel Power MOSFET, single element, enhancement mode, TMOS process technology. Features 40V maximum drain-source voltage and 75A maximum continuous drain current. Surface mount D2PAK package with 3 pins (2+tab), offering 4.4 mOhm maximum drain-source resistance at 10V. Operates across a wide temperature range from -55°C to 175°C, with a maximum power dissipation of 137000 mW.
Cross Reference
Manufacturer-stated alternates from official cross-reference tools. These are not a guaranteed pin-compatible drop-in. Qualify package, pinout, and electrical limits against the datasheet before a board change. See cross-reference vs drop-in compatible .
Suggested replacements
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IPB120N04S4-01Infineon TechnologiesDirectInfineon
MOSFETs N-Ch 40V 120A D2PAK-2 OptiMOS-T2
IPB120N04S4-02Infineon TechnologiesDirectInfineon
MOSFETs N-Ch 40V 120A D2PAK-2 OptiMOS-T2
IPB80N04S4-03Infineon TechnologiesDirectInfineon
MOSFETs N-Ch 40V 80A D2PAK-2 OptiMOS-T2
IPI120N04S4-01Infineon TechnologiesDirectInfineon
MOSFETs N-Ch 40V 120A I2PAK-3 OptiMOS-T2
IPI80N04S4-03Infineon TechnologiesDirectInfineon
MOSFETs N-Ch 40V 80A I2PAK-3 OptiMOS-T2
IRF2804Infineon TechnologiesDirectInfineon
MOSFET N-CH 40V 75A TO220AB
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