Infineon Technologies IPI120N04S4-01 MOSFETs
MOSFETs N-Ch 40V 120A I2PAK-3 OptiMOS-T2
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
IPI120N04S4-01
Detailed Description
MOSFETs N-Ch 40V 120A I2PAK-3 OptiMOS-T2
Package
I2PAK (PG-TO262-3)
Lifecycle Status
Active
Datasheet
IPI120N04S4-01 Datasheet
Quick Jump:
Technical Specifications
Infineon Technologies IPI120N04S4-01 MOSFETs technical specifications.
General
RoHS
Yes
Rthjc Max
0.8 K/W
Idpuls Max
480.0 A
Ptot Max
188.0 W
Qualification
Automotive
Vds Max
40.0 V
Rds on Max
1.9 mΩ
Vgs Th Max
4.0 V
Qg Max
135.0 nC
Polarity
N
Alternate Parts Comparison (IPI120N04S4-01 vs IPI90N04S4-02 vs IPI80N04S4-03 vs IPD90N03S4L03ATMA1)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | I2PAK (PG-TO262-3) | I2PAK (PG-TO262-3) | I2PAK (PG-TO262-3) | PG-TO252-3 |
| ID Max | 120.0 A | 90.0 A | 80.0 A | -- |
| Idpuls Max | 480.0 A | 360.0 A | 320.0 A | -- |
| Operating Temperature Max | 175.0 °C | 175.0 °C | 175.0 °C | -- |
| Operating Temperature Min | -55.0 °C | -55.0 °C | -55.0 °C | -- |
| Polarity | N | N | N | -- |
| Ptot Max | 188.0 W | 150.0 W | 94.0 W | -- |
| Qg Max | 135.0 nC | 91.0 nC | 51.0 nC | -- |
| Qualification | Automotive | Automotive | Automotive | -- |
| Rds on Max | 1.9 mΩ | 2.5 mΩ | 3.7 mΩ | -- |
| Rthjc Max | 0.8 K/W | 1.0 K/W | 1.6 K/W | -- |
| Action |
Cross Reference
Manufacturer-stated alternates from official cross-reference tools. These are not a guaranteed pin-compatible drop-in. Qualify package, pinout, and electrical limits against the datasheet before a board change. See cross-reference vs drop-in compatible .
This part is listed as a cross for
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N-channel Power MOSFET, D2PAK package, surface mount, single element.
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N-channel enhancement mode power MOSFET with a 40V drain-source voltage and 75A continuous drain current.
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N-channel Power MOSFET, single element, enhancement mode, TMOS process technology.
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