Nexperia BUK9614-60E MOSFETs
N-channel enhancement mode power MOSFET in a D2PAK surface-mount package.
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
BUK9614-60E
Base Model
Detailed Description
N-channel enhancement mode power MOSFET in a D2PAK surface-mount package. Features a 60V drain-source voltage, 56A continuous drain current, and low 12.8mOhm drain-source resistance at 10V. Designed for automotive applications with a single element per chip and TMOS process technology. Operating temperature range from -55°C to 175°C.
Package
D2PAK
Key Features
Package: D2PAK
Lifecycle Status
Active
RoHS State
Yes with Exemption
Datasheet
BUK9614-60E Datasheet
Quick Jump:
Technical Specifications
Nexperia BUK9614-60E MOSFETs technical specifications.
General
RoHS
Yes with Exemption
Number of Pins
3
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C
Package
D2PAK
Pcb
2
Tab
Tab
Package Length Mm
10.3(Max)
Package Width Mm
9.4(Max)
Package Height Mm
4.5(Max)
Alternate Parts Comparison (BUK9614-60E vs BUK9614-60E,118 vs BUK98150-55,135 vs BUK762R9-40E,118)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -55°C ~ 175°C | -55°C ~ 175°C | -55°C ~ 150°C | -55°C ~ 175°C |
| Number of Pins | 3 | 3 | 4 | 3 |
| RoHS | Yes with Exemption | Yes with Exemption | Yes | Yes with Exemption |
| AEC Qualified | Yes | Yes | Yes | Yes |
| Automotive | Yes | Yes | Yes | Yes |
| Cage Code | H2HX9 | H2HX9 | H2HX9 | H2HX9 |
| Category | Power MOSFET | Power MOSFET | Power MOSFET | Power MOSFET |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Channel Type | N | N | N | N |
| Configuration | Single | Single | Single Dual Drain | Single |
| Maximum Continuous Drain Current | 56A | 56A | 5.5A | 100A |
| Action |
Nexperia BUK9614-60E MOSFETs Overview
N-channel enhancement mode power MOSFET in a D2PAK surface-mount package. Features a 60V drain-source voltage, 56A continuous drain current, and low 12.8mOhm drain-source resistance at 10V. Designed for automotive applications with a single element per chip and TMOS process technology. Operating temperature range from -55°C to 175°C.
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