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Microsemi MSC1175M RF BJT

MSC1175M by Microsemi · RF BJT · TO59

In StockMicrosemiTO59
MSC1175M TO59 package illustration

Same model may have multiple batches, images only for reference.

MSC1175M
Manufacturer
Part Number (MPN)
MSC1175M
Package
TO59
Lifecycle Status
Obsolete
Datasheet
PDF MSC1175M Datasheet
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Technical Specifications

Microsemi MSC1175M RF BJT technical specifications.

General

RoHS
Yes
Mounting Type
Chassis Mount
Operating Temperature
250°C (TJ)
Lifecycle Status
Obsolete
Transistor Type
NPN
Voltage Collector Emitter Breakdown Max
65V
Frequency Transition
1.025GHz ~ 1.15GHz
Gain
8dB
Power Max
400W
Dc Current Gain Hfe Min IC Vce
15 @ 1A, 5V

Alternate Parts Comparison (MSC1175M vs MSC80205 vs MSC80806 vs MSC72111H)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Lifecycle StatusObsoleteObsoleteObsoleteObsolete
Mounting TypeChassis Mount------
Operating Temperature250°C (TJ)------
RoHSYes------
Current Collector IC Max12A------
Dc Current Gain Hfe Min IC Vce15 @ 1A, 5V------
Frequency Transition1.025GHz ~ 1.15GHz------
Gain8dB------
PackageTO59------
Power Max400W------
Transistor TypeNPN------
Voltage Collector Emitter Breakdown Max65V------
Action

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