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Microsemi MS2210 RF BJT

MS2210 by Microsemi · RF BJT · M216

In StockMicrosemiM216
MS2210 M216 package illustration

Same model may have multiple batches, images only for reference.

MS2210
Manufacturer
Part Number (MPN)
MS2210
Package
M216
Lifecycle Status
Obsolete
Datasheet
PDF MS2210 Datasheet
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Technical Specifications

Microsemi MS2210 RF BJT technical specifications.

General

RoHS
Compliant
Number of Pins
4
Package / Case
Bulk
Mounting Type
Chassis Mount
Operating Temperature
200°C (TJ)
Lifecycle Status
Obsolete
Collector Base Voltage Vcbo
65 V
Collector Emitter Breakdown Voltage
65 V
Current Collector IC Max
24 A
Dc Current Gain Hfe Min IC Vce
10 @ 5A, 5V

Alternate Parts Comparison (MS2210 vs MS2201 vs MS1001 vs MS2203)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseBulkM220M174M220
Mounting TypeChassis MountChassis MountChassis MountChassis Mount
Operating Temperature200°C (TJ)200°C (TJ)200°C (TJ)200°C (TJ)
RoHSCompliantYesYesYes
Current Collector IC Max24 A250mA20A300mA
Dc Current Gain Hfe Min IC Vce10 @ 5A, 5V0.95 @ 10mA, 5V20 @ 5A, 5V120 @ 100mA, 5V
Frequency Transition960MHz ~ 1.215GHz1.025GHz ~ 1.15GHz30MHz1.09GHz
Gain7dB9dB13dB10.8dB ~ 12.3dB
Power Max940 W10W270W5W
Transistor TypeNPNNPNNPNNPN
Voltage Collector Emitter Breakdown Max65 V45V18V20V
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