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Microsemi MS1076 RF BJT

MS1076 by Microsemi · RF BJT · M174

In StockMicrosemiM174
MS1076 M174 package illustration

Same model may have multiple batches, images only for reference.

MS1076
Manufacturer
Part Number (MPN)
MS1076
Package
M174
Lifecycle Status
Obsolete
Datasheet
PDF MS1076 Datasheet
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Technical Specifications

Microsemi MS1076 RF BJT technical specifications.

General

Package / Case
Bulk
Mounting Type
Chassis Mount
Operating Temperature
200°C (TJ)
Lifecycle Status
Obsolete
Current Collector IC Max
16 A
Dc Current Gain Hfe Min IC Vce
15 @ 7A, 5V
Frequency Transition
30 MHz
Gain
12dB
Power Max
320 W
Transistor Type
NPN

Alternate Parts Comparison (MS1076 vs MS2201 vs MS1001 vs MS2203)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseBulkM220M174M220
Mounting TypeChassis MountChassis MountChassis MountChassis Mount
Operating Temperature200°C (TJ)200°C (TJ)200°C (TJ)200°C (TJ)
Current Collector IC Max16 A250mA20A300mA
Dc Current Gain Hfe Min IC Vce15 @ 7A, 5V0.95 @ 10mA, 5V20 @ 5A, 5V120 @ 100mA, 5V
Frequency Transition30 MHz1.025GHz ~ 1.15GHz30MHz1.09GHz
Gain12dB9dB13dB10.8dB ~ 12.3dB
Power Max320 W10W270W5W
Transistor TypeNPNNPNNPNNPN
Voltage Collector Emitter Breakdown Max35 V45V18V20V
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