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Microsemi 2N3866A RF BJT

2N3866A by Microsemi · RF BJT · TO-39

In Stock ActiveMicrosemiTO-39
2N3866A TO-39 package illustration

Same model may have multiple batches, images only for reference.

2N3866A
Manufacturer
Part Number (MPN)
2N3866A
Package
TO-39
Lifecycle Status
Active
Datasheet
PDF 2N3866A Datasheet
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Technical Specifications

Microsemi 2N3866A RF BJT technical specifications.

General

RoHS
No
Number of Pins
3
Package / Case
Box
Mounting Type
Through Hole
Operating Temperature
-65°C ~ 200°C (TJ)
Lifecycle Status
Active
Collector Base Voltage Vcbo
60 V
Collector Emitter Breakdown Voltage
30 V
Collector Emitter Voltage Vceo
30 V
Current Collector IC Max
400 mA

Related Parts Comparison (2N3866A vs MS2201 vs SD1224 vs SD1332-05C)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
Package / CaseBoxM220M135M150
Mounting TypeThrough HoleChassis MountChassis MountSurface Mount
Operating Temperature-65°C ~ 200°C (TJ)200°C (TJ)200°C (TJ)200°C
Current Collector IC Max400 mA250mA5A30A
Dc Current Gain Hfe Min IC Vce25 @ 50mA, 5V0.95 @ 10mA, 5V20 @ 500mA, 5V50 @ 14mA, 10V
Power Max5 W10W60W180W
Voltage Collector Emitter Breakdown Max30 V45V35V15V
RoHSNoYesYes--
Frequency Transition--1.025GHz ~ 1.15GHz175MHz5.5GHz
Gain--9dB7.6dB17dB
Transistor Type--NPNNPNNPN
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