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Microsemi 10A015 RF BJT

10A015 by Microsemi · RF BJT · 55FT

In StockMicrosemi55FT
10A015 55FT package illustration

Same model may have multiple batches, images only for reference.

10A015
Manufacturer
Part Number (MPN)
10A015
Package
55FT
Lifecycle Status
Obsolete
Datasheet
PDF 10A015 Datasheet
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Technical Specifications

Microsemi 10A015 RF BJT technical specifications.

General

RoHS
Yes
Mounting Type
Stud Mount
Operating Temperature
200°C (TJ)
Lifecycle Status
Obsolete
Transistor Type
NPN
Voltage Collector Emitter Breakdown Max
24V
Frequency Transition
2.7GHz
Gain
9dB ~ 9.5dB
Power Max
6W
Dc Current Gain Hfe Min IC Vce
20 @ 100mA, 5V

Alternate Parts Comparison (10A015 vs MS2201 vs SD1224 vs SD1332-05C)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Mounting TypeStud MountChassis MountChassis MountSurface Mount
Operating Temperature200°C (TJ)200°C (TJ)200°C (TJ)200°C
Current Collector IC Max750mA250mA5A30A
Dc Current Gain Hfe Min IC Vce20 @ 100mA, 5V0.95 @ 10mA, 5V20 @ 500mA, 5V50 @ 14mA, 10V
Frequency Transition2.7GHz1.025GHz ~ 1.15GHz175MHz5.5GHz
Gain9dB ~ 9.5dB9dB7.6dB17dB
Power Max6W10W60W180W
Transistor TypeNPNNPNNPNNPN
Voltage Collector Emitter Breakdown Max24V45V35V15V
RoHSYesYesYes--
Package / Case--M220M135M150
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