Microchip Technology VP0808L-G MOSFETs
MOSFET P-CH 80V 280MA TO92-3
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
VP0808L-G
Detailed Description
MOSFET P-CH 80V 280MA TO92-3
Package
TO-92-3
Lifecycle Status
Active
Datasheet
VP0808L-G Datasheet
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Technical Specifications
Microchip Technology VP0808L-G MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
Through Hole
Technology
Si
Transistor Polarity
P-Channel
Vds Drain Source Breakdown Voltage
80 V
ID Continuous Drain Current
280 mA
Rds on Drain Source Resistance
5 Ohms
Vgs Gate Source Voltage
- 30 V, + 30 V
Threshold Voltage
1 V
Related Parts Comparison (VP0808L-G vs VP2450N8-G vs VP0104N3-G vs VP0109N3-G)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| Mounting Type | Through Hole | Surface Mount | Through Hole | Through Hole |
| Number of Channels | 1 Channel | 1 | 1 Channel | 1 Channel |
| RoHS | Yes | Compliant | Compliant | Compliant |
| Fall Time | 30 ns | 25 ns | 4 ns | 4 ns |
| Rise Time | 40 ns | 25 ns | 3 ns | 3 ns |
| Channel Mode | Enhancement | -- | Enhancement | Enhancement |
| Configuration | Single | -- | Single | Single |
| Maximum Operating Temperature C | + 150 | -- | 150 | 150 |
| Minimum Operating Temperature C | - 55 | -- | -55 | -55 |
| Pd Power Dissipation | 1 W | -- | 1 W | 1 W |
| Rds on Drain Source Resistance | 5 Ohms | -- | 8 Ohms | 8 Ohms |
| Technology | Si | -- | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Action |
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