Microchip Technology 2N7008-G MOSFETs
MOSFET N-CH 60V 230MA TO92-3
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
2N7008-G
Detailed Description
MOSFET N-CH 60V 230MA TO92-3
Package
TO-92-3
Lifecycle Status
Active
Datasheet
2N7008-G Datasheet
Quick Jump:
Technical Specifications
Microchip Technology 2N7008-G MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
Through Hole
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
60 V
ID Continuous Drain Current
230 mA
Rds on Drain Source Resistance
7.5 Ohms
Vgs Gate Source Voltage
- 30 V, + 30 V
Alternate Parts Comparison (2N7008-G vs DN3545N8-G vs DN3525N8-G vs VP2450N8-G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | Through Hole | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | - 55°C ~ + 150°C | -55 °C ~ 150 °C | -55 °C ~ 150 °C | -55 °C ~ 150 °C |
| Number of Channels | 1 Channel | 1 | 1 | 1 |
| RoHS | Yes | Compliant | Compliant | Compliant |
| Package | TO-92-3 | SOT-89 | SOT-89 | SOT-89 |
| Lifecycle Status | -- | Production | Production | Production |
| Ambient Temperature Range High | -- | 150 °C | 150 °C | 150 °C |
| Continuous Drain Current ID | -- | 200 mA | 360 mA | -160 mA |
| Country of Assembly | -- | China, Taiwan | China, Taiwan | China, Taiwan |
| Country of Fabrication | -- | United States of America | United States of America | United States of America |
| Drain to Source Breakdown Voltage | -- | 450 V | 250 V | -500 V |
| Drain to Source Resistance | -- | 20 Ω | 6 Ω | 35 Ω |
| Action |
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