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Microchip Technology 2N7008-G MOSFETs

MOSFET N-CH 60V 230MA TO92-3

52 ActiveMicrochip TechnologyTO-92-3$1.01
2N7008-G TO-92-3 package illustration

Same model may have multiple batches, images only for reference.

2N7008-G
Part Number (MPN)
2N7008-G
Detailed Description
MOSFET N-CH 60V 230MA TO92-3
Package
TO-92-3
Lifecycle Status
Active
Datasheet
PDF 2N7008-G Datasheet
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Technical Specifications

Microchip Technology 2N7008-G MOSFETs technical specifications.

General

RoHS
Yes
Number of Channels
1 Channel
Mounting Type
Through Hole
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
60 V
ID Continuous Drain Current
230 mA
Rds on Drain Source Resistance
7.5 Ohms
Vgs Gate Source Voltage
- 30 V, + 30 V

Related Parts Comparison (2N7008-G vs DN3545N8-G vs DN3525N8-G vs VP2450N8-G)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
Mounting TypeThrough HoleSurface MountSurface MountSurface Mount
Operating Temperature- 55°C ~ + 150°C-55 °C ~ 150 °C-55 °C ~ 150 °C-55 °C ~ 150 °C
Number of Channels1 Channel111
RoHSYesCompliantCompliantCompliant
PackageTO-92-3SOT-89SOT-89SOT-89
Lifecycle Status--ProductionProductionProduction
Ambient Temperature Range High--150 °C150 °C150 °C
Continuous Drain Current ID--200 mA360 mA-160 mA
Country of Assembly--China, TaiwanChina, TaiwanChina, Taiwan
Country of Fabrication--United States of AmericaUnited States of AmericaUnited States of America
Drain to Source Breakdown Voltage--450 V250 V-500 V
Drain to Source Resistance--20 Ω6 Ω35 Ω
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