Microchip Technology LND150N3-G MOSFETs
MOSFET N-CH 500V 30MA TO92-3
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
LND150N3-G
Base Model
Detailed Description
MOSFET N-CH 500V 30MA TO92-3
Package
TO-92-3
Lifecycle Status
Active
Datasheet
LND150N3-G Datasheet
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Technical Specifications
Microchip Technology LND150N3-G MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
Through Hole
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
500 V
ID Continuous Drain Current
30 mA
Rds on Drain Source Resistance
1 kOhms
Vgs Gate Source Voltage
- 20 V, + 20 V
Minimum Operating Temperature C
- 55
Alternate Parts Comparison (LND150N3-G vs LND150N8-G vs VN2222LL-G vs DN2535N3-G-P003)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Compliant | Yes | Yes |
| Configuration | Single | Single Dual Drain | Single | Single |
| Package | TO-92-3 | Tape & Reel (TR) | TO-92-3 | TO-92-3 |
| Mounting Type | Through Hole | Surface Mount | -- | Through Hole |
| Number of Channels | 1 Channel | 1 Channel | -- | 1 Channel |
| Channel Mode | Depletion | Depletion | -- | Depletion |
| Pd Power Dissipation | 740 mW | 1.6 W | -- | 1 W |
| Rds on Drain Source Resistance | 1 kOhms | 1 kOhms | -- | 25 Ohms |
| Technology | Si | MOSFET (Metal Oxide) | -- | Si |
| Transistor Polarity | N-Channel | N-Channel | -- | N-Channel |
| Transistor Type | 1 N-Channel | 1 N-Channel | -- | 1 N-Channel |
| Unit Weight | 0.016000 oz | 0.001862 oz | -- | 0.016000 oz |
| Action |
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