Microchip Technology TN2510N8-G MOSFETs
MOSFET N-CH 100V 730MA TO243AA
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
TN2510N8-G
Detailed Description
MOSFET N-CH 100V 730MA TO243AA
Package
SOT-89-3
Lifecycle Status
Active
Datasheet
TN2510N8-G Datasheet
Quick Jump:
Technical Specifications
Microchip Technology TN2510N8-G MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
100 V
ID Continuous Drain Current
730 mA
Rds on Drain Source Resistance
1.5 Ohms
Vgs Gate Source Voltage
- 20 V, + 20 V
Threshold Voltage
600 mV
Alternate Parts Comparison (TN2510N8-G vs TN0106N3-G-P003 vs TN0110N3-G vs TN0110N3-G-P002)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | Through Hole | Through Hole | Through Hole |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel | 1 Channel |
| RoHS | Yes | Compliant | Compliant | Compliant |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Configuration | Single | Single | Single | Single |
| Fall Time | 10 ns | 3 ns | 3 ns | 3 ns |
| Maximum Operating Temperature C | + 150 | 150 | 150 | 150 |
| Minimum Operating Temperature C | - 55 | -55 | -55 | -55 |
| Pd Power Dissipation | 1.6 W | 1 W | 1 W | 1 W |
| Rds on Drain Source Resistance | 1.5 Ohms | 3 Ohms | 3 Ohms | 4.5 Ohms |
| Rise Time | 10 ns | 3 ns | 3 ns | 3 ns |
| Technology | Si | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Action |
More Parts in MOSFETs
Browse additional parts from the same category, grouped by series, package type, and manufacturer. These are catalog suggestions — not verified pin-compatible alternates.
VN2450N8-GMicrochip TechnologyN-Channel Enhancement-Mode Vertical DMOS FETs | MOSFET N-CH 500V 0.25A SOT89-3
