Microchip Technology TN0110N3-G-P002 MOSFETs
MOSFET N-CH 100V 350MA TO92-3
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
TN0110N3-G-P002
Base Model
Detailed Description
MOSFET N-CH 100V 350MA TO92-3
Package
TO-226-3, TO-92-3 (TO-226AA)
Lifecycle Status
Active
Datasheet
TN0110N3-G-P002 Datasheet
Quick Jump:
Technical Specifications
Microchip Technology TN0110N3-G-P002 MOSFETs technical specifications.
General
RoHS
Compliant
Number of Pins
3
Number of Channels
1 Channel
Package / Case
TO-226-3, TO-92-3
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Automotive
No
Channel Mode
Enhancement
Channel Type
N
Alternate Parts Comparison (TN0110N3-G-P002 vs TN0110N3-G vs TN0604N3-G vs TN2510N8-G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | Through Hole | Through Hole | Through Hole | SMD/SMT |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel | 1 Channel |
| RoHS | Compliant | Compliant | Yes | Yes |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Configuration | Single | Single | Single | Single |
| Fall Time | 3 ns | 3 ns | 20 ns | 10 ns |
| Maximum Operating Temperature C | 150 | 150 | + 150 | + 150 |
| Minimum Operating Temperature C | -55 | -55 | - 55 | - 55 |
| Pd Power Dissipation | 1 W | 1 W | 740 mW | 1.6 W |
| Rds on Drain Source Resistance | 4.5 Ohms | 3 Ohms | 750 mOhms | 1.5 Ohms |
| Rise Time | 3 ns | 3 ns | 6 ns | 10 ns |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | Si | Si |
| Action |
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