Microchip Technology VN2460N8-G MOSFETs
MOSFET N-CH 600V 200MA TO243AA
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
VN2460N8-G
Detailed Description
MOSFET N-CH 600V 200MA TO243AA
Package
SOT-89-3
Lifecycle Status
Active
Datasheet
VN2460N8-G Datasheet
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Technical Specifications
Microchip Technology VN2460N8-G MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
600 V
ID Continuous Drain Current
200 mA
Rds on Drain Source Resistance
20 Ohms
Vgs Gate Source Voltage
- 20 V, + 20 V
Threshold Voltage
1.5 V
Related Parts Comparison (VN2460N8-G vs VN2450N8-G vs VN10KN3-G-P002 vs VN0606L-G)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | Surface Mount | Through Hole | Through Hole |
| Number of Channels | 1 Channel | 1 | 1 Channel | 1 Channel |
| RoHS | Yes | Compliant | Compliant | Compliant |
| Channel Mode | Enhancement | -- | Enhancement | Enhancement |
| Configuration | Single | -- | Single | Single |
| Maximum Operating Temperature C | + 150 | -- | 150 | 150 |
| Minimum Operating Temperature C | - 55 | -- | -55 | -55 |
| Pd Power Dissipation | 1.6 W | -- | 1 W | 1 W |
| Rds on Drain Source Resistance | 20 Ohms | -- | 7.5 Ohms | 3 Ohms |
| Technology | Si | -- | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Transistor Polarity | N-Channel | -- | N-Channel | N-Channel |
| Transistor Type | 1 N-Channel | -- | 1 N-Channel | 1 N-Channel |
| Action |
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