Microchip Technology TN0604N3-G MOSFETs
MOSFET N-CH 40V 700MA TO92-3
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
TN0604N3-G
Detailed Description
MOSFET N-CH 40V 700MA TO92-3
Package
TO92-3
Lifecycle Status
Active
Datasheet
TN0604N3-G Datasheet
Quick Jump:
Technical Specifications
Microchip Technology TN0604N3-G MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
Through Hole
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
40 V
ID Continuous Drain Current
700 mA
Rds on Drain Source Resistance
750 mOhms
Vgs Gate Source Voltage
- 20 V, + 20 V
Threshold Voltage
600 mV
Alternate Parts Comparison (TN0604N3-G vs TN0106N3-G-P003 vs TN0110N3-G vs TN0110N3-G-P002)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel | 1 Channel |
| RoHS | Yes | Compliant | Compliant | Compliant |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Configuration | Single | Single | Single | Single |
| Fall Time | 20 ns | 3 ns | 3 ns | 3 ns |
| Maximum Operating Temperature C | + 150 | 150 | 150 | 150 |
| Minimum Operating Temperature C | - 55 | -55 | -55 | -55 |
| Pd Power Dissipation | 740 mW | 1 W | 1 W | 1 W |
| Rds on Drain Source Resistance | 750 mOhms | 3 Ohms | 3 Ohms | 4.5 Ohms |
| Rise Time | 6 ns | 3 ns | 3 ns | 3 ns |
| Technology | Si | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Action |
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